IRFH5206PBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRFH5206PBF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 3.6 W

Tensión drenaje-fuente (Vds): 60 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 16 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 4 V

Carga de compuerta (Qg): 40 nC

Tiempo de elevación (tr): 11 nS

Conductancia de drenaje-sustrato (Cd): 360 pF

Resistencia drenaje-fuente RDS(on): 0.0067 Ohm

Empaquetado / Estuche: PQFN5X6

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IRFH5206PBF Datasheet (PDF)

1.1. irfh5206pbf.pdf Size:292K _upd-mosfet

PD -97466 IRFH5206PbF HEXFET® Power MOSFET VDS 60 V RDS(on) max 6.7 m (@VGS = 10V) Qg (typical) 40 nC RG (typical) 1.7 ID 89 A (@Tc(Bottom) = 25°C) PQFN 5X6 mm Applications • Secondary Side Synchronous Rectification • Inverters for DC Motors • DC-DC Brick Applications • Boost Converters Features and Benefits Benefits Features Low RDSon (≤ 7.0mΩ at Vgs=10V) L

1.2. irfh5206pbf.pdf Size:253K _international_rectifier

IRFH5206PbF HEXFET® Power MOSFET VDS 60 V RDS(on) max 6.7 m (@VGS = 10V) Qg (typical) 40 nC RG (typical) 1.7 ID 89 A (@Tc(Bottom) = 25°C) PQFN 5X6 mm Applications • Secondary Side Synchronous Rectification • Inverters for DC Motors • DC-DC Brick Applications • Boost Converters Features and Benefits Benefits Features Low RDSon (≤ 7.0mΩ at Vgs=10V) Lower Conduc

3.1. irfh5207pbf.pdf Size:300K _upd-mosfet

PD -96298 IRFH5207PbF HEXFET® Power MOSFET VDS 75 V RDS(on) max 9.6 mΩ (@VGS = 10V) Qg (typical) 39 nC RG (typical) 1.7 Ω ID PQFN 5X6 mm 71 A (@Tc(Bottom) = 25°C) Applications • Secondary Side Synchronous Rectification • Inverters for DC Motors • DC-DC Brick Applications • Boost Converters Features and Benefits Features Benefits Low RDSon (< 9.6 mΩ) L

3.2. irfh5207pbf.pdf Size:251K _international_rectifier

IRFH5207PbF HEXFET® Power MOSFET VDS 75 V RDS(on) max 9.6 mΩ (@VGS = 10V) Qg (typical) 40 nC RG (typical) 1.7 Ω ID PQFN 5X6 mm 71 A (@Tc(Bottom) = 25°C) Applications • Secondary Side Synchronous Rectification • Inverters for DC Motors • DC-DC Brick Applications • Boost Converters Features and Benefits Features Benefits Low RDSon (< 9.6 mΩ) Lower Conductio

3.3. irfh5204pbf.pdf Size:252K _international_rectifier

IRFH5204PbF HEXFET® Power MOSFET VDS 40 V RDS(on) max 4.3 mΩ (@VGS = 10V) Qg (typical) 43 nC RG (typical) 1.7 Ω ID PQFN 5X6 mm 100 A (@Tc(Bottom) = 25°C) Applications • Secondary Side Synchronous Rectification • Inverters for DC Motors • DC-DC Brick Applications • Boost Converters Features and Benefits Features Benefits Low RDSon (< 4.3 mΩ) Lower Conducti

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