IRFH5250PBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IRFH5250PBF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 3.6 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 25 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 45 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.35 V
   Qgⓘ - Carga de la puerta: 52 nC
   trⓘ - Tiempo de subida: 46 nS
   Cossⓘ - Capacitancia de salida: 1758 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.00115 Ohm
   Paquete / Cubierta: PQFN5X6

Búsqueda de reemplazo de MOSFET IRFH5250PBF

IRFH5250PBF Datasheet (PDF)

..1. Size:305K international rectifier
irfh5250pbf.pdf

PD -96265IRFH5250PbFHEXFET Power MOSFETVDS25 VRDS(on) max 1.15 m(@VGS = 10V)Qg (typical)52 nCRG (typical)1.3ID PQFN 5X6 mm100 A(@Tc(Bottom) = 25C)Applications OR-ing MOSFET for 12V (typical) Bus in-Rush Current Battery Operated DC Motor Inverter MOSFETFeatures and BenefitsBenefitsFeaturesLow RDSon (

..2. Size:261K infineon
irfh5250pbf.pdf

IRFH5250PbFHEXFET Power MOSFETVDS 25 VRDS(on) max 1.15 m(@VGS = 10V)Qg (typical) 52 nCRG (typical) 1.3 ID 100 APQFN 5X6 mm(@Tmb = 25C)Applications OR-ing MOSFET for 12V (typical) Bus in-Rush Current Battery Operated DC Motor Inverter MOSFETFeatures and BenefitsBenefitsFeaturesLow RDSon (

6.1. Size:261K international rectifier
irfh5250dpbf.pdf

IRFH5250DPbFHEXFET Power MOSFETVDS 25 VRDS(on) max 1.4 m(@VGS = 10V)VSD max 0.6 V(@IS = 5.0A)trr (typical) 27 nsID PQFN 5X6 mm100 A(@Tmb = 25C)Applications Synchronous MOSFET for high frequency buck convertersFeatures and BenefitsBenefitsFeaturesLow RDSon (

6.2. Size:292K infineon
irfh5250dpbf.pdf

7.1. Size:298K international rectifier
irfh5255pbf.pdf

PD -96289IRFH5255PbFHEXFET Power MOSFETVDS25 VRDS(on) max 6.0 m(@VGS = 10V)Qg (typical)7.0 nCRG (typical)0.6 ID PQFN 5X6 mm51 A(@Tc(Bottom) = 25C)Applications Control MOSFET for high Frequency Buck ConvertersFeatures and BenefitsBenefitsFeaturesLow Charge (typical 7nC) Lower Switching LossesLow Rg (typical 0.6) Lower Switching Losses

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: NTMD3P03

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