IRFH7107 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Búsqueda de reemplazo de MOSFET IRFH7107

IRFH7107 Datasheet (PDF)

1.1. irfh7107.pdf Size:267K _upd-mosfet

IRFH7107PbF HEXFET® Power MOSFET VDS 75 V RDS(on) max 8.5 mΩ (@VGS = 10V) Qg (typical) 48 nC RG (typical) 0.6 Ω ID 75 A PQFN 5X6 mm (@Tc(Bottom) = 25°C) Applications • Secondary Side Synchronous Rectification • Inverters for DC Motors • DC-DC Brick Applications • Boost Converters Features and Benefits Features Benefits Low RDSon (< 8.5mΩ) Lower Conducti

4.1. irfh7191.pdf Size:484K _upd-mosfet

FastIRFET™ IRFH7191PbF HEXFET® Power MOSFET VDSS 100 V RDS(on) max 8.0 m (@ VGS = 10V) Qg (typical) 26 nC Rg (typical) 1.0  ID 80 A (@TC (Bottom) = 25°C) PQFN 5X6 mm Applications  Primary Switch for High Frequency 48V/60V Telecom DC-DC Power Supplies  Secondary Side Synchronous Rectifier  Hot Swap and Active O-Ring Features

4.2. irfh7110.pdf Size:234K _upd-mosfet

IRFH7110PbF HEXFET® Power MOSFET VDS 100 V Vgs max ± 20 V RDS(on) max 13.5 mΩ (@VGS = 10V) 58 nC QG (typical) RG (typical) 0.6 Ω PQFN 5X6 mm ID 50 A (@Tc(Bottom) = 25°C) Applications • Secondary Side Synchronous Rectification • Inverters for DC Motors • DC-DC Brick Applications • Boost Converters Features and Benefits Features Benefits Low RDSon (< 13.5

 4.3. irfh7188.pdf Size:511K _upd-mosfet

FastIRFET™ IRFH7188PbF HEXFET® Power MOSFET VDSS 100 V RDS(on) max 6.0 m (@ VGS = 10V) Qg (typical) 33 nC Rg (typical) 0.92  ID 105 A (@TC (Bottom) = 25°C) PQFN 5X6 mm Applications  Primary Switch for High Frequency 48V/60V Telecom DC-DC Power Supplies  Secondary Side Synchronous Rectifier  Hot Swap and Active O-Ring Feature

4.4. irfh7194.pdf Size:756K _upd-mosfet

FastIRFET™ IRFH7194PbF HEXFET® Power MOSFET VDSS 100 V RDS(on) max 16.4 m (@ VGS = 10V) Qg (typical) 13 nC Rg (typical) 2.1  ID 35 A (@TC (Bottom) = 25°C) PQFN 5X6 mm Applications  Primary Switch for High Frequency 48V/60V Telecom DC-DC Power Supplies  Secondary Side Synchronous Rectifier Features Benefits Low RDS(ON) (< 16.4m) Lower Conducti

 4.5. irfh7184.pdf Size:510K _upd-mosfet

FastIRFET™ IRFH7184PbF HEXFET® Power MOSFET VDSS 100 V RDS(on) max 4.8 m (@ VGS = 10V) Qg (typical) 36 nC Rg (typical) 1.2  ID 128 A (@TC (Bottom) = 25°C) PQFN 5X6 mm Applications  Optimized for Secondary Side Synchronous Rectification  Primary Switch for High Frequency 48V/60V Telecom DC-DC Power Supplies  Hot Swap and Active

4.6. irfh7190.pdf Size:505K _upd-mosfet

FastIRFET™ IRFH7190PbF HEXFET® Power MOSFET VDSS 100 V RDS(on) max 7.5 m (@ VGS = 10V) Qg (typical) 26 nC Rg (typical) 1.0  ID 82 A (@TC (Bottom) = 25°C) PQFN 5X6 mm Applications  Optimized for Secondary Side Synchronous Rectification  Primary Switch for High Frequency 48V/60V Telecom DC-DC Power Supplies  Hot Swap and Active O-R

4.7. irfh7185.pdf Size:539K _upd-mosfet

FastIRFET™ IRFH7185PbF HEXFET® Power MOSFET VDSS 100 V RDS(on) max 5.2 m (@ VGS = 10V) Qg (typical) 36 nC Rg (typical) 1.2  ID 123 A (@TC (Bottom) = 25°C) PQFN 5X6 mm Applications  Primary Switch for High Frequency 48V/60V Telecom DC-DC Power Supplies  Secondary Side Synchronous Rectifier  Hot Swap and Active O-Ring Features

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: SWP069R10VS | SWD069R10VS | SWI069R10VS | NTHL082N65S3F | NSVJ3557SA3 | NP90N06VLG | NP90N055VUK | NP90N055VUG | NP90N055VDG | NP90N055PUH | NP90N055PDH | NP90N055NUK | NP90N055NUH | NP90N055NDH | NP90N055MUK |