IRFH7107 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRFH7107
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pd): 3.6 W
Tensión drenaje-fuente (Vds): 75 V
Tensión compuerta-fuente (Vgs): 20 V
Corriente continua de drenaje (Id): 14 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral compuerta-fuente Vgs(th): 4 V
Carga de compuerta (Qg): 48 nC
Tiempo de elevación (tr): 12 nS
Conductancia de drenaje-sustrato (Cd): 365 pF
Resistencia drenaje-fuente RDS(on): 0.0085 Ohm
Empaquetado / Estuche: PQFN5X6
Búsqueda de reemplazo de MOSFET IRFH7107
IRFH7107 Datasheet (PDF)
1.1. irfh7107.pdf 
Size:267K _upd-mosfet
IRFH7107PbF HEXFET® Power MOSFET VDS 75 V RDS(on) max 8.5 mΩ (@VGS = 10V) Qg (typical) 48 nC RG (typical) 0.6 Ω ID 75 A PQFN 5X6 mm (@Tc(Bottom) = 25°C) Applications • Secondary Side Synchronous Rectification • Inverters for DC Motors • DC-DC Brick Applications • Boost Converters Features and Benefits Features Benefits Low RDSon (< 8.5mΩ) Lower Conducti
4.1. irfh7190.pdf Size:505K _upd-mosfet
FastIRFET™ IRFH7190PbF HEXFET® Power MOSFET VDSS 100 V RDS(on) max 7.5 m (@ VGS = 10V) Qg (typical) 26 nC Rg (typical) 1.0 ID 82 A (@TC (Bottom) = 25°C) PQFN 5X6 mm Applications Optimized for Secondary Side Synchronous Rectification Primary Switch for High Frequency 48V/60V Telecom DC-DC Power Supplies Hot Swap and Active O-R
4.2. irfh7188.pdf Size:511K _upd-mosfet
FastIRFET™ IRFH7188PbF HEXFET® Power MOSFET VDSS 100 V RDS(on) max 6.0 m (@ VGS = 10V) Qg (typical) 33 nC Rg (typical) 0.92 ID 105 A (@TC (Bottom) = 25°C) PQFN 5X6 mm Applications Primary Switch for High Frequency 48V/60V Telecom DC-DC Power Supplies Secondary Side Synchronous Rectifier Hot Swap and Active O-Ring Feature
4.3. irfh7194.pdf Size:756K _upd-mosfet
FastIRFET™ IRFH7194PbF HEXFET® Power MOSFET VDSS 100 V RDS(on) max 16.4 m (@ VGS = 10V) Qg (typical) 13 nC Rg (typical) 2.1 ID 35 A (@TC (Bottom) = 25°C) PQFN 5X6 mm Applications Primary Switch for High Frequency 48V/60V Telecom DC-DC Power Supplies Secondary Side Synchronous Rectifier Features Benefits Low RDS(ON) (< 16.4m) Lower Conducti
4.4. irfh7191.pdf Size:484K _upd-mosfet
FastIRFET™ IRFH7191PbF HEXFET® Power MOSFET VDSS 100 V RDS(on) max 8.0 m (@ VGS = 10V) Qg (typical) 26 nC Rg (typical) 1.0 ID 80 A (@TC (Bottom) = 25°C) PQFN 5X6 mm Applications Primary Switch for High Frequency 48V/60V Telecom DC-DC Power Supplies Secondary Side Synchronous Rectifier Hot Swap and Active O-Ring Features
4.5. irfh7184.pdf Size:510K _upd-mosfet
FastIRFET™ IRFH7184PbF HEXFET® Power MOSFET VDSS 100 V RDS(on) max 4.8 m (@ VGS = 10V) Qg (typical) 36 nC Rg (typical) 1.2 ID 128 A (@TC (Bottom) = 25°C) PQFN 5X6 mm Applications Optimized for Secondary Side Synchronous Rectification Primary Switch for High Frequency 48V/60V Telecom DC-DC Power Supplies Hot Swap and Active
4.6. irfh7110.pdf Size:234K _upd-mosfet
IRFH7110PbF HEXFET® Power MOSFET VDS 100 V Vgs max ± 20 V RDS(on) max 13.5 mΩ (@VGS = 10V) 58 nC QG (typical) RG (typical) 0.6 Ω PQFN 5X6 mm ID 50 A (@Tc(Bottom) = 25°C) Applications • Secondary Side Synchronous Rectification • Inverters for DC Motors • DC-DC Brick Applications • Boost Converters Features and Benefits Features Benefits Low RDSon (< 13.5
4.7. irfh7185.pdf Size:539K _upd-mosfet
FastIRFET™ IRFH7185PbF HEXFET® Power MOSFET VDSS 100 V RDS(on) max 5.2 m (@ VGS = 10V) Qg (typical) 36 nC Rg (typical) 1.2 ID 123 A (@TC (Bottom) = 25°C) PQFN 5X6 mm Applications Primary Switch for High Frequency 48V/60V Telecom DC-DC Power Supplies Secondary Side Synchronous Rectifier Hot Swap and Active O-Ring Features
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