IRFH7545 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRFH7545

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 83 W

Tensión drenaje-fuente (Vds): 60 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 85 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 3.7 V

Carga de compuerta (Qg): 73 nC

Tiempo de elevación (tr): 26 nS

Conductancia de drenaje-sustrato (Cd): 365 pF

Resistencia drenaje-fuente RDS(on): 0.0052 Ohm

Empaquetado / Estuche: PQFN5X6

Búsqueda de reemplazo de MOSFET IRFH7545

IRFH7545 Datasheet (PDF)

1.1. irfh7545.pdf Size:557K _upd-mosfet

StrongIRFET™ IRFH7545PbF HEXFET® Power MOSFET Application  Brushed Motor drive applications VDSS 60V  BLDC Motor drive applications  Battery powered circuits RDS(on) typ. 4.3m  Half-bridge and full-bridge topologies  Synchronous rectifier applications max 5.2m  Resonant mode power supplies ID 85A  OR-ing and re

5.1. irfh7914pbf.pdf Size:249K _upd-mosfet

PD - 97336 IRFH7914PbF HEXFET® Power MOSFET Applications l Control MOSFET of Sync-Buck Converters VDSS RDS(on) max Qg used for Notebook Processor Power 8.7m 30V Ω@VGS = 10V 8.3nC l Control MOSFET for Isolated DC-DC Converters in Networking Systems Benefits S l Very low RDS(ON) at 4.5V VGS S D l Low Gate Charge S l Fully Characterized Avalanche Voltage and D G Current

5.2. irfh7932pbf.pdf Size:272K _upd-mosfet

PD - 96140A IRFH7932PbF Applications HEXFET® Power MOSFET l Synchronous MOSFET for Notebook VDSS RDS(on) max Qg Processor Power l Synchronous Rectifer MOSFET for Isolated 3.3m @VGS = 10V 30V 34nC DC-DC Converters in Networking Systems Benefits S l Very low RDS(ON) at 4.5V VGS S l Low Gate Charge D S l Fully Characterized Avalanche Voltage and D G Current D l 100% Tested

5.3. irfh7085.pdf Size:500K _upd-mosfet

StrongIRFET™ IRFH7085PbF HEXFET® Power MOSFET Application VDSS 60V  Half-bridge and full-bridge topologies  Synchronous rectifier applications RDS(on) typ. 2.6m  Resonant mode power supplies  DC/DC converters max 3.2m  DC/AC Inverters ID (Silicon Limited) 147A ID (Package Limited) 100A Benefits  Improved Gate, A

5.4. irfh7440.pdf Size:270K _upd-mosfet

StrongIRFET™ IRFH7440PbF HEXFET® Power MOSFET Applications l Brushed Motor drive applications VDSS 40V l BLDC Motor drive applications RDS(on) typ. 1.8mΩ l PWM Inverterized topologies max. 2.4mΩ l Battery powered circuits ID (Silicon Limited) 159A l Half-bridge and full-bridge topologies l Electronic ballast applications ID (Package Limited) 85A l Synchronous rectifier app

5.5. irfh7004.pdf Size:268K _upd-mosfet

StrongIRFET™ IRFH7004PbF Applications HEXFET® Power MOSFET l Brushed Motor drive applications VDSS 40V l BLDC Motor drive applications RDS(on) typ. 1.1mΩ l Battery powered circuits l Half-bridge and full-bridge topologies max. 1.4mΩ l Synchronous rectifier applications ID (Silicon Limited) 259A l Resonant mode power supplies ID (Package Limited) 100A l OR-ing and redundant p

5.6. irfh7190.pdf Size:505K _upd-mosfet

FastIRFET™ IRFH7190PbF HEXFET® Power MOSFET VDSS 100 V RDS(on) max 7.5 m (@ VGS = 10V) Qg (typical) 26 nC Rg (typical) 1.0  ID 82 A (@TC (Bottom) = 25°C) PQFN 5X6 mm Applications  Optimized for Secondary Side Synchronous Rectification  Primary Switch for High Frequency 48V/60V Telecom DC-DC Power Supplies  Hot Swap and Active O-R

5.7. irfh7787.pdf Size:589K _upd-mosfet

StrongIRFET™ IRFH7787PbF HEXFET® Power MOSFET Application  Brushed motor drive applications VDSS 75V  BLDC motor drive applications  Battery powered circuits RDS(on) typ. 6.6m  Half-bridge and full-bridge topologies  Synchronous rectifier applications max 8.0m  Resonant mode power supplies ID 68A  OR-ing and re

5.8. irfh7188.pdf Size:511K _upd-mosfet

FastIRFET™ IRFH7188PbF HEXFET® Power MOSFET VDSS 100 V RDS(on) max 6.0 m (@ VGS = 10V) Qg (typical) 33 nC Rg (typical) 0.92  ID 105 A (@TC (Bottom) = 25°C) PQFN 5X6 mm Applications  Primary Switch for High Frequency 48V/60V Telecom DC-DC Power Supplies  Secondary Side Synchronous Rectifier  Hot Swap and Active O-Ring Feature

5.9. irfh7936pbf.pdf Size:266K _upd-mosfet

PD -97337A IRFH7936PbF Applications HEXFET® Power MOSFET l Synchronous MOSFET for Notebook VDSS RDS(on) max Qg Processor Power l Synchronous Rectifer MOSFET for Isolated 4.8m Ω@VGS = 10V 30V 17nC DC-DC Converters in Networking Systems Benefits S l Very low RDS(ON) at 4.5V VGS S l Low Gate Charge D S l Fully Characterized Avalanche Voltage and D G Current D l 100% Teste

5.10. irfh7194.pdf Size:756K _upd-mosfet

FastIRFET™ IRFH7194PbF HEXFET® Power MOSFET VDSS 100 V RDS(on) max 16.4 m (@ VGS = 10V) Qg (typical) 13 nC Rg (typical) 2.1  ID 35 A (@TC (Bottom) = 25°C) PQFN 5X6 mm Applications  Primary Switch for High Frequency 48V/60V Telecom DC-DC Power Supplies  Secondary Side Synchronous Rectifier Features Benefits Low RDS(ON) (< 16.4m) Lower Conducti

5.11. irfh7934pbf.pdf Size:310K _upd-mosfet

PD -97151 IRFH7934PbF Applications HEXFET® Power MOSFET l Control MOSFET of Sync-Buck Converters VDSS RDS(on) max Qg used for Notebook Processor Power l Control MOSFET for Isolated DC-DC 30V 3.5m @VGS = 10V 20nC Converters in Networking Systems Benefits S l Very low RDS(ON) at 4.5V VGS S l Low Gate Charge D S l Fully Characterized Avalanche Voltage and D G Current D l 100%

5.12. irfh7446.pdf Size:268K _upd-mosfet

StrongIRFET™ IRFH7446PbF HEXFET® Power MOSFET Applications l Brushed Motor drive applications VDSS 40V l BLDC Motor drive applications RDS(on) typ. 2.5mΩ l PWM Inverterized topologies max. 3.3mΩ l Battery powered circuits ID (Silicon Limited) 117A l Half-bridge and full-bridge topologies l Synchronous rectifier applications ID (Package Limited) 85A l Resonant mode power sup

5.13. irfh7191.pdf Size:484K _upd-mosfet

FastIRFET™ IRFH7191PbF HEXFET® Power MOSFET VDSS 100 V RDS(on) max 8.0 m (@ VGS = 10V) Qg (typical) 26 nC Rg (typical) 1.0  ID 80 A (@TC (Bottom) = 25°C) PQFN 5X6 mm Applications  Primary Switch for High Frequency 48V/60V Telecom DC-DC Power Supplies  Secondary Side Synchronous Rectifier  Hot Swap and Active O-Ring Features

5.14. irfh7184.pdf Size:510K _upd-mosfet

FastIRFET™ IRFH7184PbF HEXFET® Power MOSFET VDSS 100 V RDS(on) max 4.8 m (@ VGS = 10V) Qg (typical) 36 nC Rg (typical) 1.2  ID 128 A (@TC (Bottom) = 25°C) PQFN 5X6 mm Applications  Optimized for Secondary Side Synchronous Rectification  Primary Switch for High Frequency 48V/60V Telecom DC-DC Power Supplies  Hot Swap and Active

5.15. irfh7921pbf.pdf Size:254K _upd-mosfet

PD - 97335 IRFH7921PbF HEXFET® Power MOSFET Applications l High Frequency Point-of-Load Synchronous Buck VDSS RDS(on) max Qg Converter for Applications in Neworking & Computing Systems 8.5m 30V Ω@VGS = 10V 9.3nC l Optimized for Control FET Applications Benefits S l Very low RDS(ON) at 4.5V VGS S D l Low Gate Charge S l Fully Characterized Avalanche Voltage and D G Cur

5.16. irfh7107.pdf Size:267K _upd-mosfet

IRFH7107PbF HEXFET® Power MOSFET VDS 75 V RDS(on) max 8.5 mΩ (@VGS = 10V) Qg (typical) 48 nC RG (typical) 0.6 Ω ID 75 A PQFN 5X6 mm (@Tc(Bottom) = 25°C) Applications • Secondary Side Synchronous Rectification • Inverters for DC Motors • DC-DC Brick Applications • Boost Converters Features and Benefits Features Benefits Low RDSon (< 8.5mΩ) Lower Conducti

5.17. irfh7110.pdf Size:234K _upd-mosfet

IRFH7110PbF HEXFET® Power MOSFET VDS 100 V Vgs max ± 20 V RDS(on) max 13.5 mΩ (@VGS = 10V) 58 nC QG (typical) RG (typical) 0.6 Ω PQFN 5X6 mm ID 50 A (@Tc(Bottom) = 25°C) Applications • Secondary Side Synchronous Rectification • Inverters for DC Motors • DC-DC Brick Applications • Boost Converters Features and Benefits Features Benefits Low RDSon (< 13.5

5.18. irfh7185.pdf Size:539K _upd-mosfet

FastIRFET™ IRFH7185PbF HEXFET® Power MOSFET VDSS 100 V RDS(on) max 5.2 m (@ VGS = 10V) Qg (typical) 36 nC Rg (typical) 1.2  ID 123 A (@TC (Bottom) = 25°C) PQFN 5X6 mm Applications  Primary Switch for High Frequency 48V/60V Telecom DC-DC Power Supplies  Secondary Side Synchronous Rectifier  Hot Swap and Active O-Ring Features

5.19. irfh7911pbf.pdf Size:525K _upd-mosfet

PD - 97427A IRFH7911PbF HEXFET® Power MOSFET Q1 Q2 VDS 30 30 V RDS(on) max 8.6 3.0 m: (@VGS = 10V) Qg (typical) 8.3 34 nC ID 13 28 A (@TA = 25°C) Dual PQFN 5X6 mm Applications • Control and synchronous MOSFET for buck converters Features and Benefits Benefits Features Increased power density Control and synchronous FET in one package (50% vs two PQFN 5x6) Low char

5.20. irfh7084.pdf Size:706K _upd-mosfet

StrongIRFET™ IRFH7084PbF Application HEXFET® Power MOSFET  Half-bridge and full-bridge topologies  Synchronous rectifier applications VDSS 40V  Resonant mode power supplies  DC/DC converters RDS(on) typ. 0.95m  DC/AC Inverters 1.25m max ID (Silicon Limited) 265A ID (Package Limited) 100A Benefits  Improved Ga

5.21. irfh7914pbf.pdf Size:300K _international_rectifier

IRFH7914PbF HEXFET® Power MOSFET Applications l Control MOSFET of Sync-Buck Converters VDSS RDS(on) max Qg used for Notebook Processor Power 8.7m 30V Ω@VGS = 10V 8.3nC l Control MOSFET for Isolated DC-DC Converters in Networking Systems Benefits l Very low RDS(ON) at 4.5V VGS l Low Gate Charge l Fully Characterized Avalanche Voltage and Current l 100% Tested for RG l Lead-

5.22. irfh7932pbf.pdf Size:335K _international_rectifier

IRFH7932PbF Applications HEXFET® Power MOSFET l Synchronous MOSFET for Notebook VDSS RDS(on) max Qg Processor Power l Synchronous Rectifer MOSFET for Isolated 3.3m @VGS = 10V 30V 34nC DC-DC Converters in Networking Systems Benefits S l Very low RDS(ON) at 4.5V VGS S l Low Gate Charge D S l Fully Characterized Avalanche Voltage and D G Current D l 100% Tested for RG D l

5.23. irfh7936pbf.pdf Size:302K _international_rectifier

IRFH7936PbF Applications HEXFET® Power MOSFET l Synchronous MOSFET for Notebook VDSS RDS(on) max Qg Processor Power l Synchronous Rectifer MOSFET for Isolated 4.8m 30V Ω@VGS = 10V 17nC DC-DC Converters in Networking Systems Benefits l Very low RDS(ON) at 4.5V VGS l Low Gate Charge l Fully Characterized Avalanche Voltage and Current l 100% Tested for RG l Lead-Free (Qualified

5.24. irfh7934pbf.pdf Size:274K _international_rectifier

IRFH7934PbF HEXFET® Power MOSFET Applications VDSS RDS(on) max Qg l Control MOSFET of Sync-Buck Converters used for Notebook Processor Power 30V 3.5m @VGS = 10V 20nC l Control MOSFET for Isolated DC-DC Converters in Networking Systems Benefits l Very low RDS(ON) at 4.5V VGS l Low Gate Charge l Fully Characterized Avalanche Voltage and Current l 100% Tested for RG PQFN 5X6 mm l L

5.25. irfh7921pbf.pdf Size:300K _international_rectifier

IRFH7921PbF HEXFET® Power MOSFET Applications l High Frequency Point-of-Load Synchronous Buck VDSS RDS(on) max Qg Converter for Applications in Neworking & Computing Systems 8.5m 30V Ω@VGS = 10V 9.3nC l Optimized for Control FET Applications Benefits l Very low RDS(ON) at 4.5V VGS l Low Gate Charge l Fully Characterized Avalanche Voltage and Current l 100% Tested for RG l

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

Liste

Recientemente añadidas las descripciónes de los transistores: