AM30N10-50D Todos los transistores

 

AM30N10-50D MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AM30N10-50D
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 50 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 20 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1 V
   Qgⓘ - Carga de la puerta: 25 nC
   trⓘ - Tiempo de subida: 15 nS
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.05 Ohm
   Paquete / Cubierta: TO-252

 Búsqueda de reemplazo de MOSFET AM30N10-50D

 

AM30N10-50D Datasheet (PDF)

 ..1. Size:65K  analog power
am30n10-50d.pdf

AM30N10-50D AM30N10-50D

Analog Power AM30N10-50DN-Channel 100-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low VDS (V) rDS(on) m() ID (A)rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 50 @ VGS = 10V 26converters and power management in portable and 10059 @ VGS = 4.5V 24bat

 6.1. Size:296K  analog power
am30n10-70d.pdf

AM30N10-50D AM30N10-50D

Analog Power AM30N10-70DN-Channel 100-V (D-S) MOSFET PRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)78 @ VGS = 10V26 Low thermal impedance 10092 @ VGS = 4.5V25 Fast switching speed Typical Applications: PoE Power Sourcing Equipment PoE Powered Devices Telecom DC/DC converters White LED boost co

 6.2. Size:143K  analog power
am30n10-70de.pdf

AM30N10-50D AM30N10-50D

Analog Power AM30N10-70DEN-Channel 100-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low VDS (V) rDS(on) m) ID (A)(rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 78 @ VGS = 10V 21converters and power management in portable and 10092 @ VGS = 4.5V 20

 6.3. Size:86K  analog power
am30n10-78d.pdf

AM30N10-50D AM30N10-50D

Analog Power AM30N10-78DN-Channel 100-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low VDS (V) rDS(on) m() ID (A)rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 78 @ VGS = 10V 21converters and power management in portable and 10098 @ VGS = 4.5V 19bat

Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
Back to Top

 


AM30N10-50D
  AM30N10-50D
  AM30N10-50D
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918

 

 

 
Back to Top