ITF86110DK8T Todos los transistores

 

ITF86110DK8T MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: ITF86110DK8T
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 7.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 55 nS
   Cossⓘ - Capacitancia de salida: 200 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.025 Ohm
   Paquete / Cubierta: SO8

 Búsqueda de reemplazo de MOSFET ITF86110DK8T

 

ITF86110DK8T Datasheet (PDF)

 ..1. Size:199K  intersil
 itf86110dk8t.pdf pdf_icon

ITF86110DK8T

ITF86110DK8T Data Sheet January 2000 File Number 4807.2 7.5A, 30V, 0.025 Ohm, Dual N-Channel, Features Logic Level, Power MOSFET Ultra Low On-Resistance - rDS(ON) = 0.025 , VGS = 10V Packaging [ /Title - rDS(ON) = 0.034 , VGS = 4.5V SO8 (JEDEC MS-012AA) (HUF7 - rDS(ON) = 0.042 , VGS = 4.0V 6400S Gate to Source Protection Diode BRANDING DASH K8) Simulation Model

 7.1. Size:198K  intersil
 itf86116sqt.pdf pdf_icon

ITF86110DK8T

ITF86116SQT Data Sheet March 2000 File Number 4808.2 10A, 30V, 0.012 Ohm, N-Channel, Logic Features Level, Power MOSFET Ultra Low On-Resistance - rDS(ON) = 0.012 , VGS = 10V Packaging - rDS(ON) = 0.016 , VGS = 4.5V TSSOP8 Gate to Source Protection Diode Simulation Models - Temperature Compensated PSPICE and SABER 5 Electrical Models 1 - Spice and SABER Thermal Im

 8.1. Size:172K  intersil
 itf86182sk8t.pdf pdf_icon

ITF86110DK8T

ITF86182SK8T Data Sheet January 2000 File Number 4797.2 11A, 30V, 0.0115 Ohm, P-Channel, Logic Features Level, Power MOSFET Ultra Low On-Resistance [ /Title - rDS(ON) = 0.0115 , VGS = -10V Packaging (ITF86 - rDS(ON) = 0.016 , VGS = -4.5V SO8 (JEDEC MS-012AA) 182SK - rDS(ON) = 0.0175 , VGS = -4V 8T) BRANDING DASH Gate to Source Protection Diode /Sub- Simulation M

 8.2. Size:173K  intersil
 itf86130sk8t.pdf pdf_icon

ITF86110DK8T

ITF86130SK8T TM Data Sheet June 2000 File Number 4798.4 14A, 30V, 0.0078 Ohm, N-Channel, Logic Features Level, Power MOSFET Ultra Low On-Resistance - rDS(ON) = 0.0078 , VGS = 10V Packaging - rDS(ON) = 0.010 , VGS = 4.5V SO8 (JEDEC MS-012AA) - rDS(ON) = 0.012 , VGS = 4.0V BRANDING DASH Gate to Source Protection Diode Simulation Models - Temperature Compensated PSP

MOSTRAR MÁS

Otros transistores... IRLZ34NL , IRLZ34NS , IRLZ40 , IRLZ44 , IRLZ44A , IRLZ44N , IRLZ44NL , IRLZ44NS , K3569 , ITF86116SQT , ITF86130SK8T , ITF86172SK8T , ITF86174SQT , ITF86182SK8T , ITF87008DQT , ITF87012SVT , ITF87052SVT .

History: IXFR48N60Q3 | BL3N90-U | BL40N25-F

 

 
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