ITF86110DK8T MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: ITF86110DK8T
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2.5 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 7.5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 55 nS
Cossⓘ - Capacitancia de salida: 200 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.025 Ohm
Paquete / Cubierta: SO8
Búsqueda de reemplazo de ITF86110DK8T MOSFET
ITF86110DK8T Datasheet (PDF)
itf86110dk8t.pdf

ITF86110DK8TData Sheet January 2000 File Number 4807.27.5A, 30V, 0.025 Ohm, Dual N-Channel, FeaturesLogic Level, Power MOSFET Ultra Low On-Resistance- rDS(ON) = 0.025, VGS = 10VPackaging[ /Title- rDS(ON) = 0.034, VGS = 4.5VSO8 (JEDEC MS-012AA)(HUF7- rDS(ON) = 0.042, VGS = 4.0V6400S Gate to Source Protection DiodeBRANDING DASHK8) Simulation Model
itf86116sqt.pdf

ITF86116SQTData Sheet March 2000 File Number 4808.210A, 30V, 0.012 Ohm, N-Channel, Logic FeaturesLevel, Power MOSFET Ultra Low On-Resistance- rDS(ON) = 0.012, VGS = 10VPackaging- rDS(ON) = 0.016, VGS = 4.5VTSSOP8 Gate to Source Protection Diode Simulation Models- Temperature Compensated PSPICE and SABER5 Electrical Models1 - Spice and SABER Thermal Im
itf86182sk8t.pdf

ITF86182SK8TData Sheet January 2000 File Number 4797.211A, 30V, 0.0115 Ohm, P-Channel, Logic FeaturesLevel, Power MOSFET Ultra Low On-Resistance[ /Title- rDS(ON) = 0.0115, VGS = -10VPackaging(ITF86- rDS(ON) = 0.016, VGS = -4.5VSO8 (JEDEC MS-012AA)182SK - rDS(ON) = 0.0175, VGS = -4V8T) BRANDING DASH Gate to Source Protection Diode/Sub- Simulation M
itf86130sk8t.pdf

ITF86130SK8TTMData Sheet June 2000 File Number 4798.414A, 30V, 0.0078 Ohm, N-Channel, Logic FeaturesLevel, Power MOSFET Ultra Low On-Resistance- rDS(ON) = 0.0078, VGS = 10VPackaging- rDS(ON) = 0.010, VGS = 4.5VSO8 (JEDEC MS-012AA)- rDS(ON) = 0.012, VGS = 4.0VBRANDING DASH Gate to Source Protection Diode Simulation Models- Temperature Compensated PSP
Otros transistores... IRLZ34NL , IRLZ34NS , IRLZ40 , IRLZ44 , IRLZ44A , IRLZ44N , IRLZ44NL , IRLZ44NS , SPP20N60C3 , ITF86116SQT , ITF86130SK8T , ITF86172SK8T , ITF86174SQT , ITF86182SK8T , ITF87008DQT , ITF87012SVT , ITF87052SVT .
History: HTD1K5N10 | QM3014M6 | BL7N60A-D
History: HTD1K5N10 | QM3014M6 | BL7N60A-D



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