ITF86110DK8T Todos los transistores

 

ITF86110DK8T MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: ITF86110DK8T

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 2.5 W

Tensión drenaje-fuente (Vds): 30 V

Corriente continua de drenaje (Id): 7.5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Resistencia drenaje-fuente RDS(on): 0.025 Ohm

Empaquetado / Estuche: SO8

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ITF86110DK8T Datasheet (PDF)

1.1. itf86110dk8t.pdf Size:199K _intersil

ITF86110DK8T
ITF86110DK8T

ITF86110DK8T Data Sheet January 2000 File Number 4807.2 7.5A, 30V, 0.025 Ohm, Dual N-Channel, Features Logic Level, Power MOSFET • Ultra Low On-Resistance - rDS(ON) = 0.025Ω, VGS = 10V Packaging [ /Title - rDS(ON) = 0.034Ω, VGS = 4.5V SO8 (JEDEC MS-012AA) (HUF7 - rDS(ON) = 0.042Ω, VGS = 4.0V 6400S • Gate to Source Protection Diode BRANDING DASH K8) • Simulation Model

3.1. itf86116sqt.pdf Size:198K _intersil

ITF86110DK8T
ITF86110DK8T

ITF86116SQT Data Sheet March 2000 File Number 4808.2 10A, 30V, 0.012 Ohm, N-Channel, Logic Features Level, Power MOSFET • Ultra Low On-Resistance - rDS(ON) = 0.012Ω, VGS = 10V Packaging - rDS(ON) = 0.016Ω, VGS = 4.5V TSSOP8 • Gate to Source Protection Diode • Simulation Models - Temperature Compensated PSPICE™ and SABER 5 Electrical Models 1 - Spice and SABER Thermal Im

 4.1. itf86172sk8t.pdf Size:173K _intersil

ITF86110DK8T
ITF86110DK8T

ITF86172SK8T Data Sheet January 2000 File Number 4809.1 10A, 30V, 0.016 Ohm, P-Channel, Logic Features Level, Power MOSFET • Ultra Low On-Resistance [ /Title - rDS(ON) = 0.016Ω, VGS = -10V Packaging (HUF7 - rDS(ON) = 0.023Ω, VGS = -4.5V SO8 (JEDEC MS-012AA) 6400S - rDS(ON) = 0.026Ω, VGS = -4V BRANDING DASH • Gate to Source Protection Diode K8) • Simulation Models /Su

4.2. itf86130sk8t.pdf Size:173K _intersil

ITF86110DK8T
ITF86110DK8T

ITF86130SK8T TM Data Sheet June 2000 File Number 4798.4 14A, 30V, 0.0078 Ohm, N-Channel, Logic Features Level, Power MOSFET • Ultra Low On-Resistance - rDS(ON) = 0.0078Ω, VGS = 10V Packaging - rDS(ON) = 0.010Ω, VGS = 4.5V SO8 (JEDEC MS-012AA) - rDS(ON) = 0.012Ω, VGS = 4.0V BRANDING DASH • Gate to Source Protection Diode • Simulation Models - Temperature Compensated PSP

 4.3. itf86174sqt.pdf Size:207K _intersil

ITF86110DK8T
ITF86110DK8T

ITF86174SQT Data Sheet March 2000 File Number 4799.3 9A, 30V, 0.016 Ohm, P-Channel, Logic Features Level, Power MOSFET • Ultra Low On-Resistance - rDS(ON) = 0.016Ω, VGS = -10V Packaging - rDS(ON) = 0.024Ω, VGS = -4.5V TSSOP-8 - rDS(ON) = 0.027Ω, VGS = -4V • Gate to Source Protection Diode 5 • Simulation Models 1 - Temperature Compensated PSPICE™ and SABER 2 4 3 E

4.4. itf86182sk8t.pdf Size:172K _intersil

ITF86110DK8T
ITF86110DK8T

ITF86182SK8T Data Sheet January 2000 File Number 4797.2 11A, 30V, 0.0115 Ohm, P-Channel, Logic Features Level, Power MOSFET • Ultra Low On-Resistance [ /Title - rDS(ON) = 0.0115Ω, VGS = -10V Packaging (ITF86 - rDS(ON) = 0.016Ω, VGS = -4.5V SO8 (JEDEC MS-012AA) 182SK - rDS(ON) = 0.0175Ω, VGS = -4V 8T) BRANDING DASH • Gate to Source Protection Diode /Sub- • Simulation M

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