AM30N25-270P MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AM30N25-270P

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 300 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 250 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 26 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 23 nS

Cossⓘ - Capacitancia de salida: 140 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.3 Ohm

Encapsulados: TO-220AB

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AM30N25-270P datasheet

 ..1. Size:293K  analog power
am30n25-270p.pdf pdf_icon

AM30N25-270P

Analog Power AM30N25-270P N-Channel 250-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID(A) Low r trench technology DS(on) 300 @ VGS = 10V Low thermal impedance 250 26a 450 @ VGS = 5.5V Fast switching speed Typical Applications White LED boost converters Automotive Systems DRAIN connected Industrial DC/DC Conversion Circu

 8.1. Size:307K  analog power
am30n20-400pcfm.pdf pdf_icon

AM30N25-270P

Analog Power AM30N20-400PCFM N-Channel 200-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID(A) Low r trench technology DS(on) 400 @ VGS = 10V 9 Low thermal impedance 200 450 @ VGS = 5.5V 8.5 Fast switching speed Typical Applications PoE Power Sourcing Equipment PoE Powered Devices Telecom DC/DC converters White LED bo

 8.2. Size:85K  analog power
am30n20-78d.pdf pdf_icon

AM30N25-270P

Analog Power AM30N20-78D N-Channel 200-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a PRODUCT SUMMARY high cell density trench process to provide low VDS (V) rDS(on) m( ) ID (A) rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 78 @ VGS = 10V 21 converters and power management in portable and 200 92 @ VGS = 5.5V 20 bat

 9.1. Size:138K  analog power
am30n02-40d.pdf pdf_icon

AM30N25-270P

Analog Power AM30N02-40D N-Channel 20-V (D-S) MOSFET These miniature surface mount MOSFETs utilize PRODUCT SUMMARY High Cell Density process. Low rDS(on) assures VDS (V) rDS(on) m( ) ID (A) minimal power loss and conserves energy, making this device ideal for use in power management 29 @ VGS = 4.5V 34 circuitry. Typical applications are PWMDC-DC 20 43 @ VGS = 2.5V 22 converters

Otros transistores... AM30N08-80D, AM30N10-50D, AM30N10-70D, AM30N10-70DE, AM30N10-78D, AM30N15-60D, AM30N20-400PCFM, AM30N20-78D, IRF520, AM30P06-40D, AM30P06-45D, AM30P10-80D, AM3400, AM3400A, AM3400N, AM3401, AM3402N