AM30P06-45D Todos los transistores

 

AM30P06-45D MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AM30P06-45D

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 50 W

Tensión drenaje-fuente (Vds): 60 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 61 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 1 V

Carga de compuerta (Qg): 18 nC

Tiempo de elevación (tr): 10 nS

Resistencia drenaje-fuente RDS(on): 0.049 Ohm

Empaquetado / Estuche: TO-252

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AM30P06-45D Datasheet (PDF)

1.1. am30p06-40d.pdf Size:304K _upd-mosfet

AM30P06-45D
AM30P06-45D

Analog Power AM30P06-40D P-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY Key Features: rDS(on) (mΩ) VDS (V) ID (A) • Low r trench technology DS(on) 40 @ VGS = -10V -29 • Low thermal impedance -60 55 @ VGS = -4.5V -25 • Fast switching speed Typical Applications: • White LED boost converters • Automotive Systems • Industrial DC/DC Conversion Circuits ABSOLUTE MAX

1.2. am30p06-45d.pdf Size:138K _upd-mosfet

AM30P06-45D
AM30P06-45D

Analog Power AM30P06-45D P-Channel 60-V (D-S) MOSFET These miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures PRODUCT SUMMARY minimal power loss and conserves energy, making VDS (V) rDS(on) m(Ω)ID (A) this device ideal for use in power management 49 @ VGS = -10V 28 circuitry. Typical applications are PWM DC-DC -60 converters, power management

 5.1. am30p10-80d.pdf Size:183K _upd-mosfet

AM30P06-45D
AM30P06-45D

Analog Power AM30P10-80D P-Channel 100-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARY rDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) m(Ω) ID (A) dissipation. Typical applications are DC-DC 80 @ VGS = -10V 25 converters and power management in portable and -100 battery-powered produ

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