AM3400N Todos los transistores

 ..1. Size:319K  analog power
 am3400n.pdf

Analog Power AM3400N N-Channel 200-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID (A) Low r trench technology DS(on) 950 @ VGS = 10V 1.2 Low thermal impedance 200 1100 @ VGS = 5.5V 1.1 Fast switching speed Typical Applications White LED boost converters TSOP-6 Automotive Systems Industrial DC/DC Conversion Circuits ABSOL

 8.1. Size:327K  ait semi
 am3400.pdf

AiT Semiconductor Inc. AM3400 www.ait-ic.com MOSFET 30V N-CHANNEL ENHANCEMENT MODE DESCRIPTION FEATURES The AM3400 is the N-Channel logic enhancement 30V/5.8A, R =28m (typ.)@V =10V DS(ON) GS mode power field effect transistor is produced using 30V/5.0A, R =30m (typ.)@V =4.5V DS(ON) GS high cell density. Advanced trench technology to 30V/3.5A, R =40m (typ.)@V =2.

 8.2. Size:326K  ait semi
 am3400a.pdf

AiT Semiconductor Inc. AM3400A www.ait-ic.com MOSFET 30V N-CHANNEL ENHANCEMENT MODE DESCRIPTION FEATURES The AM3400A is the N-Channel logic enhancement 30V/5.8A, R =22m (typ.)@V =10V DS(ON) GS mode power field effect transistor is produced using 30V/5.0A, R =25m (typ.)@V =4.5V DS(ON) GS high cell density. Advanced trench technology to 30V/3.5A, R =31m (typ.)@V =

 9.1. Size:136K  analog power
 am3406n.pdf

Analog Power AM3406N N-Channel 30V (D-S) MOSFET These miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) PRODUCT SUMMARY assures minimal power loss and conserves VDS (V) rDS(on) ( )ID (A) energy, making this device ideal for use in 0.032 @ VGS = 10 V 6.3 power management circuitry. Typical 30 applications are power switch, power 0.044 @ VGS = 4.5V 5

 9.2. Size:218K  analog power
 am3405p.pdf

Analog Power AM3405P P-Channel 20-V (D-S) MOSFET These miniature surface mount MOSFETs utilize PRODUCT SUMMARY High Cell Density process. Low rDS(on) assures minimal power loss and conserves energy, making VDS (V) rDS(on) m( )ID (A) this device ideal for use in power management 56 @ VGS = -4.5V -4.9 circuitry. Typical applications are PWMDC-DC converters, power management in po

 9.3. Size:507K  analog power
 am3407pe.pdf

Analog Power AM3407PE P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID(A) Low r trench technology DS(on) 34 @ VGS = -4.5V -5 Low thermal impedance -20 48 @ VGS = -2.5V -3 Fast switching speed Typical Applications Battery Powered Instruments Portable Computing Mobile Phones GPS Units and Media Players Drain 1,2,5,6

 9.4. Size:91K  analog power
 am3403p.pdf

Analog Power AM3403P P-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs PRODUCT SUMMARY utilize a high cell density trench process to VDS (V) rDS(on) (O) ID (A) provide low rDS(on) and to ensure minimal 0.056 @ V = -10V -4.0 power loss and heat dissipation. Typical GS -30 applications are DC-DC converters and 0.086 @ V = -4.5V -3.4 GS power management in portabl

 9.5. Size:237K  analog power
 am3402n.pdf

Analog Power AM3402N N-Channel Logic Level MOSFET These miniature surface mount MOSFETs PRODUCT SUMMARY utilize a high cell density trench process to VDS (V) rDS(on) ( ) ID (A) provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical 0.027 @ VGS = 10 V 6.3 applications are DC-DC converters and power 30 0.035 @ VGS = 4.5V 5.5 management in portable an

 9.6. Size:555K  ait semi
 am3401.pdf

AiT Semiconductor Inc. AM3401 www.ait-ic.com MOSFET -30V P-CHANNEL ENHANCEMENT MODE DESCRIPTION FEATURES The AM3401 is the P-Channel logic enhancement -30V/-4.3A, R =47m (typ.)@V =-10V DS(ON) GS mode power field effect transistor is produced using -30V/-3.5A, R =55m (typ.)@V =-4.5V DS(ON) GS high cell density. Advanced trench technology to -30V/-2.5A, R =70m (typ.

 9.7. Size:522K  ait semi
 am3407.pdf

AiT Semiconductor Inc. AM3407 www.ait-ic.com MOSFET -30V P-CHANNEL ENHANCEMENT MODE MOSFET DESCRIPTION FEATURES The AM3407 is the P-Channel logic enhancement -30V/-4.3A, R =44m (typ.)@V =-10V DS(ON) GS mode power field effect transistor is produced using -30V/-3.0A, R =70m (typ.)@V =-4.5V DS(ON) GS high cell density. Advanced trench technology to Super high density c

 9.8. Size:403K  ait semi
 am3406.pdf

AiT Semiconductor Inc. AM3406 www.ait-ic.com 30V N-CHANNEL ENHANCEMENT MODE MOSFET DESCRIPTION FEATURES The AM3406 is the N-Channel logic enhancement 30V/6.0A, R = 20m (typ.) @V = 10V DS(ON) GS mode power field effect transistor is produced using 30V/4.8A, R = 27m (typ.) @V = 4.5V DS(ON) GS high cell density. Advanced trench technology to Super high density cell de

 9.9. Size:2316K  cn vbsemi
 am3407pe.pdf

AM3407PE www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Available 0.049 at VGS = - 10 V - 4.8 TrenchFET Power MOSFET - 30 5.1 nC 0.054 at VGS = - 4.5 V - 4.1 APPLICATIONS Load Switch TSOP-6 (4) S Top V iew 1 6 (3) G 3 mm 5 2 3 4 (1, 2, 5, 6) D 2.85 mm P-Ch

 9.10. Size:868K  cn vbsemi
 am3401e3vr.pdf

AM3401E3VR www.VBsemi.tw P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg Tested VDS (V) RDS(on) ( ) Typ. ID (A)a Qg (Typ.) 0.046 at VGS = - 10 V - 5.6 0.049 at VGS = - 6 V - 5 11.4 nC - 30 APPLICATIONS 0.054 at VGS = - 4.5 V -4.5 For Mobile Computing - Load Switch - Notebook Adaptor Switch S TO-236 - DC/DC Converter (SOT-