AM3413P Todos los transistores

 

AM3413P MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AM3413P
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 200 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 0.74 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 5 nS
   Cossⓘ - Capacitancia de salida: 45 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 2.4 Ohm
   Paquete / Cubierta: TSOP-6
 

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AM3413P PDF Specs

 ..1. Size:315K  analog power
am3413p.pdf pdf_icon

AM3413P

Analog Power AM3413P P-Channel 200-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID (A) Low r trench technology DS(on) 2400 @ VGS = -10V -0.74 Low thermal impedance -200 2550 @ VGS = -4.5V -0.72 Fast switching speed TSOP-6 Typical Applications White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits... See More ⇒

 8.1. Size:585K  ait semi
am3413.pdf pdf_icon

AM3413P

AiT Semiconductor Inc. AM3413 www.ait-ic.com MOSFET 20V P-CHANNEL MOSFET DESCRIPTION FEATURES The AM3413 uses advanced trench technology to V = -20V DS provide excellent R , low gate charge and I = -3A (V = -4.5V) DS(ON) D GS operation with gate voltages as low as 1.8V. This R ... See More ⇒

 9.1. Size:327K  analog power
am3412n.pdf pdf_icon

AM3413P

Analog Power AM3412N N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID(A) Low r trench technology DS(on) 27 @ VGS = 10V 6.3 Low thermal impedance 30 35 @ VGS = 4.5V 5.5 Fast switching speed Typical Applications White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMUM R... See More ⇒

 9.2. Size:73K  analog power
am3411pe.pdf pdf_icon

AM3413P

Analog Power AM3411PE P-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs PRODUCT SUMMARY utilize a high cell density trench process to provide low rDS(on) and to ensure minimal VDS (V) rDS(on) ( ) ID (A) power loss and heat dissipation. Typical 0.042 @ VGS = -4.5V -5.7 applications are DC-DC converters and -20 0.057 @ VGS = -2.5V -4.9 power management in portab... See More ⇒

Otros transistores... AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , AM3411PE , AM3412N , AM3413 , IRFB7545 , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P , AM3425P , AM3428N , AM3431P .

 

 
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