AM3435P MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: AM3435P
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 26.5 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 4.9 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 0.7 V
   Qgⓘ - Carga de la puerta: 25 nC
   trⓘ - Tiempo de subida: 35 nS
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.056 Ohm
   Paquete / Cubierta: TSOP-6

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AM3435P Datasheet (PDF)

..1. Size:161K analog power
am3435p.pdf

Analog Power AM3435PP-Channel 20-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize PRODUCT SUMMARYHigh Cell Density process. Low rDS(on) assures minimal power loss and conserves energy, making VDS (V) rDS(on) m()ID (A)this device ideal for use in power management 56 @ VGS = -4.5V -4.9circuitry. Typical applications are PWMDC-DC -26.5converters, power managemen

9.1. Size:247K analog power
am3438ne.pdf

Analog Power AM3438NEN-Channel Logic Level MOSFETThese miniature surface mount MOSFETs PRODUCT SUMMARYutilize a high cell density trench process to VDS (V) rDS(on) () ID (A)provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical 0.027 @ VGS = 10 V 6.3applications are DC-DC converters and power 300.04 @ VGS = 4.5V 5.5management in portable an

9.2. Size:315K analog power
am3431p.pdf

Analog Power AM3431PP-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)24 @ VGS = -10V -7.5 Low thermal impedance -3036 @ VGS = -4.5V -6.1 Fast switching speed Typical Applications: TSOP-6 Load Switches DC/DC Conversion Motor Drives ABSOLUTE MAXIMUM RATINGS (TA = 25C UNLESS

9.3. Size:59K analog power
am3434n.pdf

Analog Power AM3434NN-Channel 20V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARYrDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) (OHM) ID (A)dissipation. Typical applications are DC-DC converters and power management in portable and 0.032 @ V = 4.5 V 6.0GSbattery-powered products

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

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