AM3438NE Todos los transistores

 ..1. Size:247K  analog power
 am3438ne.pdf

Analog Power AM3438NE N-Channel Logic Level MOSFET These miniature surface mount MOSFETs PRODUCT SUMMARY utilize a high cell density trench process to VDS (V) rDS(on) ( ) ID (A) provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical 0.027 @ VGS = 10 V 6.3 applications are DC-DC converters and power 30 0.04 @ VGS = 4.5V 5.5 management in portable an

 9.1. Size:161K  analog power
 am3435p.pdf

Analog Power AM3435P P-Channel 20-V (D-S) MOSFET These miniature surface mount MOSFETs utilize PRODUCT SUMMARY High Cell Density process. Low rDS(on) assures minimal power loss and conserves energy, making VDS (V) rDS(on) m( )ID (A) this device ideal for use in power management 56 @ VGS = -4.5V -4.9 circuitry. Typical applications are PWMDC-DC -26.5 converters, power managemen

 9.2. Size:315K  analog power
 am3431p.pdf

Analog Power AM3431P P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID (A) Low r trench technology DS(on) 24 @ VGS = -10V -7.5 Low thermal impedance -30 36 @ VGS = -4.5V -6.1 Fast switching speed Typical Applications TSOP-6 Load Switches DC/DC Conversion Motor Drives ABSOLUTE MAXIMUM RATINGS (TA = 25 C UNLESS

 9.3. Size:59K  analog power
 am3434n.pdf

Analog Power AM3434N N-Channel 20V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARY rDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) (OHM) ID (A) dissipation. Typical applications are DC-DC converters and power management in portable and 0.032 @ V = 4.5 V 6.0 GS battery-powered products