ITF86172SK8T MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: ITF86172SK8T
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2.5 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 10 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 81 nS
Cossⓘ - Capacitancia de salida: 470 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.016 Ohm
Paquete / Cubierta: SO8
Búsqueda de reemplazo de ITF86172SK8T MOSFET
ITF86172SK8T datasheet
itf86172sk8t.pdf
ITF86172SK8T Data Sheet January 2000 File Number 4809.1 10A, 30V, 0.016 Ohm, P-Channel, Logic Features Level, Power MOSFET Ultra Low On-Resistance [ /Title - rDS(ON) = 0.016 , VGS = -10V Packaging (HUF7 - rDS(ON) = 0.023 , VGS = -4.5V SO8 (JEDEC MS-012AA) 6400S - rDS(ON) = 0.026 , VGS = -4V BRANDING DASH Gate to Source Protection Diode K8) Simulation Models /Su
itf86174sqt.pdf
ITF86174SQT Data Sheet March 2000 File Number 4799.3 9A, 30V, 0.016 Ohm, P-Channel, Logic Features Level, Power MOSFET Ultra Low On-Resistance - rDS(ON) = 0.016 , VGS = -10V Packaging - rDS(ON) = 0.024 , VGS = -4.5V TSSOP-8 - rDS(ON) = 0.027 , VGS = -4V Gate to Source Protection Diode 5 Simulation Models 1 - Temperature Compensated PSPICE and SABER 2 4 3 E
itf86116sqt.pdf
ITF86116SQT Data Sheet March 2000 File Number 4808.2 10A, 30V, 0.012 Ohm, N-Channel, Logic Features Level, Power MOSFET Ultra Low On-Resistance - rDS(ON) = 0.012 , VGS = 10V Packaging - rDS(ON) = 0.016 , VGS = 4.5V TSSOP8 Gate to Source Protection Diode Simulation Models - Temperature Compensated PSPICE and SABER 5 Electrical Models 1 - Spice and SABER Thermal Im
itf86182sk8t.pdf
ITF86182SK8T Data Sheet January 2000 File Number 4797.2 11A, 30V, 0.0115 Ohm, P-Channel, Logic Features Level, Power MOSFET Ultra Low On-Resistance [ /Title - rDS(ON) = 0.0115 , VGS = -10V Packaging (ITF86 - rDS(ON) = 0.016 , VGS = -4.5V SO8 (JEDEC MS-012AA) 182SK - rDS(ON) = 0.0175 , VGS = -4V 8T) BRANDING DASH Gate to Source Protection Diode /Sub- Simulation M
Otros transistores... IRLZ44 , IRLZ44A , IRLZ44N , IRLZ44NL , IRLZ44NS , ITF86110DK8T , ITF86116SQT , ITF86130SK8T , SPP20N60C3 , ITF86174SQT , ITF86182SK8T , ITF87008DQT , ITF87012SVT , ITF87052SVT , ITF87056DQT , ITF87068SQT , ITF87072DK8T .
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