AM3444N MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AM3444N

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 6.5 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 7 nS

Cossⓘ - Capacitancia de salida: 42 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.032 Ohm

Encapsulados: TSOP-6

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AM3444N datasheet

 ..1. Size:327K  analog power
am3444n.pdf pdf_icon

AM3444N

Analog Power AM3444N N-Channel 40-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID(A) Low r trench technology DS(on) 32 @ VGS = 10V 6.5 Low thermal impedance 40 44 @ VGS = 4.5V 5.6 Fast switching speed Typical Applications White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMUM R

 9.1. Size:218K  analog power
am3445p.pdf pdf_icon

AM3444N

Analog Power AM3445P P-Channel 20-V (D-S) MOSFET These miniature surface mount MOSFETs PRODUCT SUMMARY utilize a high cell density trench process to VDS (V) rDS(on) ( ) ID (A) provide low rDS(on) and to ensure minimal 0.038 @ VGS = -4.5V -5.6 power loss and heat dissipation. Typical -20 0.054 @ VGS = -2.5V -4.8 applications are DC-DC converters and power management in portabl

 9.2. Size:87K  analog power
am3443p.pdf pdf_icon

AM3444N

Analog Power AM3443P P-Channel 20-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARY rDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) m(OHM) ID (A) dissipation. Typical applications are DC-DC 65 @ V = -4.5V -4.5 converters and power management in portable and GS battery-powered products su

 9.3. Size:163K  analog power
am3447p.pdf pdf_icon

AM3444N

Analog Power AM3447P P-Channel 40-V (D-S) MOSFET PRODUCT SUMMARY These miniature surface mount MOSFETs utilize a high cell density trench process to VDS (V) rDS(on) ( )ID (A) provide low rDS(on) and to ensure minimal 0.070 @ VGS = -10V -4.4 power loss and heat dissipation. Typical -40 applications are DC-DC converters and 0.090 @ VGS = -4.5V -3.9 power management in portable a

Otros transistores... AM3428N, AM3431P, AM3434N, AM3435P, AM3438NE, AM3441P, AM3443C, AM3443P, IRF840, AM3445P, AM3446N, AM3447P, AM3454N, AM3455P, AM3456N, AM3456NE, AM3457P