AM3470N Todos los transistores

 

AM3470N MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AM3470N
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 2.2 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 24 nS
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.28 Ohm
   Paquete / Cubierta: TSOP-6
     - Selección de transistores por parámetros

 

AM3470N Datasheet (PDF)

 ..1. Size:174K  analog power
am3470n.pdf pdf_icon

AM3470N

Analog Power AM3470NN-Channel 100V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARYrDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) ()ID (A)dissipation. Typical applications are DC-DC converters and power management in portable and 0.280 @ VGS = 10 V 2.2battery-powered products suc

 9.1. Size:322K  analog power
am3471p.pdf pdf_icon

AM3470N

Analog Power AM3471PP-Channel 100-V (D-S) MOSFET PRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)600 @ VGS = -10V -1.5 Low thermal impedance -100700 @ VGS = -4.5V -1.4 Fast switching speed Typical Applications: TSOP-6 Battery Powered Instruments Portable Computing Mobile Phones GPS Units and Media

 9.2. Size:102K  analog power
am3474n.pdf pdf_icon

AM3470N

Analog Power AM3474NN-Channel 100-V (D-S) MOSFETPRODUCT SUMMARY Key Features:rDS(on) (m) VDS (V) ID(A) Low r trench technologyDS(on)70 @ VGS = 10V4.4 Low thermal impedance100120 @ VGS = 5.5V3.4 Fast switching speedTypical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion CircuitsABSOLUTE MAXIMUM

 9.3. Size:332K  analog power
am3472n.pdf pdf_icon

AM3470N

Analog Power AM3472NN-Channel 100-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)170 @ VGS = 10V2.9 Low thermal impedance 100185 @ VGS = 5.5V2.7 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIM

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History: PPMT2301 | MTN50N06E3 | SM3116NAF | SSM3J327F | IPI051N15N5 | SSFT4004 | CPC3730

 

 
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