AM3921P MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AM3921P
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1.15 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V
|Id|ⓘ - Corriente continua de drenaje: 2.5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 20 nS
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.13 Ohm
Encapsulados: TSOP-6
Búsqueda de reemplazo de AM3921P MOSFET
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AM3921P datasheet
am3921p.pdf
Analog Power AM3921P P-Channel 20-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARY rDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) (OHM) ID (A) dissipation. Typical applications are DC-DC converters and power management in portable and 0.130 @ VGS = -4.5V -2.5 -20 battery-powered products
am3922n.pdf
Analog Power AM3922N Dual N-Channel Logical Level MOSFET These miniature surface mount MOSFETs utilize a PRODUCT SUMMARY high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) (OHM) ID (A) dissipation. Typical applications are DC-DC 0.047 @ VGS = 4.5 V 4.1 converters and power management in portable and 20 battery-powere
am3925p.pdf
Analog Power AM3925P P-Channel 20-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARY rDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) (OHM) ID (A) dissipation. Typical applications are DC-DC 0.079 @ VGS = -4.5V -3.2 converters and power management in portable and -20 battery-powered produc
Otros transistores... AM3560C, AM3599C, AM35N03-40D, AM35N03-59D, AM3850C, AM3902N, AM3904N, AM3906N, IRFP260, AM3922N, AM3925P, AM3930N, AM3932N, AM3932NE, AM3933P, AM3940N, AM3940NE
History: AM4842N | TMU3N90 | SM4839NSK
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