AM3932NE MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AM3932NE

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.3 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V

|Id|ⓘ - Corriente continua de drenaje: 3.5 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 5 nS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.063 Ohm

Encapsulados: TSOP-6

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AM3932NE datasheet

 ..1. Size:262K  analog power
 am3932ne.pdf pdf_icon

AM3932NE

Analog Power AM3932NE N-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARY rDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) m( )ID (A) dissipation. Typical applications are DC-DC 63 @ VGS = 4.5V 3.5 converters and power management in portable and 30 battery-powered products su

 7.1. Size:235K  analog power
 am3932n.pdf pdf_icon

AM3932NE

Analog Power AM3932N N-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a PRODUCT SUMMARY high cell density trench process to provide low VDS (V) rDS(on) m( )ID (A) rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 63 @ VGS = 4.5V 3.5 converters and power management in portable and 30 battery-powered products s

 9.1. Size:115K  analog power
 am3933p.pdf pdf_icon

AM3932NE

Analog Power AM3933P P-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures PRODUCT SUMMARY minimal power loss and conserves energy, making VDS (V) rDS(on) (OHM) ID (A) this device ideal for use in power management circuitry. Typical applications are DC-DC 0.130 @ VGS = -4.5V -2.5 -26.5 converters, power management in

 9.2. Size:151K  analog power
 am3930n.pdf pdf_icon

AM3932NE

Analog Power AM3930N N-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize PRODUCT SUMMARY High Cell Density process. Low rDS(on) assures VDS (V) rDS(on) m( )ID (A) minimal power loss and conserves energy, making this device ideal for use in power management 58 @ VGS = 10V 3.5 circuitry. Typical applications are PWMDC-DC 30 converters, power management in p

MOSTRAR MÁS

Otros transistores... AM3902N, AM3904N, AM3906N, AM3921P, AM3922N, AM3925P, AM3930N, AM3932N, 13N50, AM3933P, AM3940N, AM3940NE, AM3949P, AM3961P, AM3962N, AM3962NE, AM3993P