AM3940NE MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AM3940NE
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1.3 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 3.5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 5 nS
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.058 Ohm
Encapsulados: TSOP-6
Búsqueda de reemplazo de AM3940NE MOSFET
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AM3940NE datasheet
am3940ne.pdf
Analog Power AM3940NE N-Channel 40-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a PRODUCT SUMMARY high cell density trench process to provide low VDS (V) rDS(on) m( )ID (A) rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 58 @ VGS = 10V 3.5 converters and power management in portable and 40 battery-powered products s
am3940n.pdf
Analog Power AM3940N N-Channel 40-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a PRODUCT SUMMARY high cell density trench process to provide low VDS (V) rDS(on) m( )ID (A) rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 58 @ VGS = 10V 3.5 converters and power management in portable and 40 battery-powered products su
am3949p.pdf
Analog Power AM3949P P-Channel 40-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARY rDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) ( )ID (A) dissipation. Typical applications are DC-DC converters and power management in portable and 0.185 @ VGS = -10V -2.5 -40 battery-powered products s
Otros transistores... AM3921P, AM3922N, AM3925P, AM3930N, AM3932N, AM3932NE, AM3933P, AM3940N, 5N65, AM3949P, AM3961P, AM3962N, AM3962NE, AM3993P, AM3998N, AM40N04-20D, AM40N04-30D
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