AM3949P MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AM3949P
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1.15 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 2.5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 20 nS
Cossⓘ - Capacitancia de salida: 130 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.185 Ohm
Paquete / Cubierta: TSOP-6
Búsqueda de reemplazo de AM3949P MOSFET
AM3949P Datasheet (PDF)
am3949p.pdf

Analog Power AM3949PP-Channel 40-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARYrDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) ()ID (A)dissipation. Typical applications are DC-DC converters and power management in portable and 0.185 @ VGS = -10V -2.5-40battery-powered products s
am3940ne.pdf

Analog Power AM3940NEN-Channel 40-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low VDS (V) rDS(on) m()ID (A)rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 58 @ VGS = 10V 3.5converters and power management in portable and 40battery-powered products s
am3940n.pdf

Analog Power AM3940NN-Channel 40-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low VDS (V) rDS(on) m()ID (A)rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 58 @ VGS = 10V 3.5converters and power management in portable and 40battery-powered products su
Otros transistores... AM3922N , AM3925P , AM3930N , AM3932N , AM3932NE , AM3933P , AM3940N , AM3940NE , IRF530 , AM3961P , AM3962N , AM3962NE , AM3993P , AM3998N , AM40N04-20D , AM40N04-30D , AM40N04-30DE .



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