AM40N20-180P MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AM40N20-180P
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 300 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 200 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 34 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 14 nS
Cossⓘ - Capacitancia de salida: 80 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.18 Ohm
Paquete / Cubierta: TO-220AB
Búsqueda de reemplazo de MOSFET AM40N20-180P
AM40N20-180P Datasheet (PDF)
am40n20-180p.pdf
Analog Power AM40N20-180PN-Channel 200-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)180 @ VGS = 10V Low thermal impedance 20034a340 @ VGS = 5.5V Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIM
am40n04-30d.pdf
Analog Power AM40N04-30DN-Channel 40-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)32 @ VGS = 10V33 Low thermal impedance 4042 @ VGS = 4.5V29 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMUM
am40n10-28d.pdf
Analog Power AM40N10-28DN-Channel 100-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low VDS (V) rDS(on) m() ID (A)rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 28 @ VGS = 10V 35converters and power management in portable and 10030 @ VGS = 4.5V 33bat
am40n08-30d.pdf
Analog Power AM40N08-30DN-Channel 80-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)26 @ VGS = 10V36 Low thermal impedance 8036 @ VGS = 4.5V31 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMUM
am40n06-28d.pdf
Analog Power AM40N06-28DN-Channel 60-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low VDS (V) rDS(on) m() ID (A)rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 28 @ VGS = 10V 35converters and power management in portable and 6030 @ VGS = 4.5V 34batte
am40n04-30de.pdf
Analog Power AM40N04-30DEN-Channel 40-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low VDS (V) rDS(on) m() ID (A)rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 32 @ VGS = 10V 33converters and power management in portable and 4042 @ VGS = 4.5V 29batt
am40n10-30d.pdf
Analog Power AM40N10-30DN-Channel 100-V (D-S) MOSFET PRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)36 @ VGS = 10V26 Low thermal impedance 10042 @ VGS = 4.5V24 Fast switching speed Typical Applications: PoE Power Sourcing Equipment PoE Powered Devices Telecom DC/DC converters White LED boost co
am40n10-30i.pdf
Analog Power AM40N10-30IN-Channel 100-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)36 @ VGS = 10V31 Low thermal impedance 10042 @ VGS = 4.5V29 Fast switching speed Typical Applications: TO-251 White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSO
am40n04-20d.pdf
Analog Power AM40N04-20DN-Channel 40-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)22 @ VGS = 10V39 Low thermal impedance 4027 @ VGS = 4.5V36 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMUM
am40n04-20d.pdf
AM40N04-20Dwww.VBsemi.twN-Channel 4 0-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.013 at VGS = 10 V 5540 42 nC0.018 at VGS = 4.5 V 45APPLICATIONSD OR-ingTO-252 Server DC/DCGDG SSTop ViewN-Channel MOSFET
Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
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Recientemente añadidas las descripciónes de los transistores:
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918