AM40N20-180P Todos los transistores

 

AM40N20-180P MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AM40N20-180P
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 300 W
   Voltaje máximo drenador - fuente |Vds|: 200 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 34 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tensión umbral entre puerta y fuente |Vgs(th)|: 1 V
   Carga de la puerta (Qg): 7 nC
   Tiempo de subida (tr): 14 nS
   Conductancia de drenaje-sustrato (Cd): 80 pF
   Resistencia entre drenaje y fuente RDS(on): 0.18 Ohm
   Paquete / Cubierta: TO-220AB

 Búsqueda de reemplazo de MOSFET AM40N20-180P

 

AM40N20-180P Datasheet (PDF)

 ..1. Size:289K  analog power
am40n20-180p.pdf

AM40N20-180P
AM40N20-180P

Analog Power AM40N20-180PN-Channel 200-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)180 @ VGS = 10V Low thermal impedance 20034a340 @ VGS = 5.5V Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIM

 9.1. Size:297K  analog power
am40n04-30d.pdf

AM40N20-180P
AM40N20-180P

Analog Power AM40N04-30DN-Channel 40-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)32 @ VGS = 10V33 Low thermal impedance 4042 @ VGS = 4.5V29 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMUM

 9.2. Size:61K  analog power
am40n10-28d.pdf

AM40N20-180P
AM40N20-180P

Analog Power AM40N10-28DN-Channel 100-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low VDS (V) rDS(on) m() ID (A)rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 28 @ VGS = 10V 35converters and power management in portable and 10030 @ VGS = 4.5V 33bat

 9.3. Size:291K  analog power
am40n08-30d.pdf

AM40N20-180P
AM40N20-180P

Analog Power AM40N08-30DN-Channel 80-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)26 @ VGS = 10V36 Low thermal impedance 8036 @ VGS = 4.5V31 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMUM

 9.4. Size:74K  analog power
am40n06-28d.pdf

AM40N20-180P
AM40N20-180P

Analog Power AM40N06-28DN-Channel 60-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low VDS (V) rDS(on) m() ID (A)rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 28 @ VGS = 10V 35converters and power management in portable and 6030 @ VGS = 4.5V 34batte

 9.5. Size:276K  analog power
am40n04-30de.pdf

AM40N20-180P
AM40N20-180P

Analog Power AM40N04-30DEN-Channel 40-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low VDS (V) rDS(on) m() ID (A)rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 32 @ VGS = 10V 33converters and power management in portable and 4042 @ VGS = 4.5V 29batt

 9.6. Size:291K  analog power
am40n10-30d.pdf

AM40N20-180P
AM40N20-180P

Analog Power AM40N10-30DN-Channel 100-V (D-S) MOSFET PRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)36 @ VGS = 10V26 Low thermal impedance 10042 @ VGS = 4.5V24 Fast switching speed Typical Applications: PoE Power Sourcing Equipment PoE Powered Devices Telecom DC/DC converters White LED boost co

 9.7. Size:303K  analog power
am40n10-30i.pdf

AM40N20-180P
AM40N20-180P

Analog Power AM40N10-30IN-Channel 100-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)36 @ VGS = 10V31 Low thermal impedance 10042 @ VGS = 4.5V29 Fast switching speed Typical Applications: TO-251 White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSO

 9.8. Size:299K  analog power
am40n04-20d.pdf

AM40N20-180P
AM40N20-180P

Analog Power AM40N04-20DN-Channel 40-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)22 @ VGS = 10V39 Low thermal impedance 4027 @ VGS = 4.5V36 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMUM

 9.9. Size:2118K  cn vbsemi
am40n04-20d.pdf

AM40N20-180P
AM40N20-180P

AM40N04-20Dwww.VBsemi.twN-Channel 4 0-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.013 at VGS = 10 V 5540 42 nC0.018 at VGS = 4.5 V 45APPLICATIONSD OR-ingTO-252 Server DC/DCGDG SSTop ViewN-Channel MOSFET

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