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AM4400NE MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AM4400NE
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 3.1 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 4.6 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 10 nS
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.086 Ohm
   Paquete / Cubierta: SOIC-8
 

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AM4400NE Datasheet (PDF)

 ..1. Size:199K  analog power
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AM4400NE

Analog Power AM4400NEN-Channel 60-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARYrDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) m()ID (A)dissipation. Typical applications are DC-DC converters and power management in portable and 82 @ VGS = 10V 4.660battery-powered products suc

 7.1. Size:308K  analog power
am4400n.pdf pdf_icon

AM4400NE

Analog Power AM4400NN-Channel 60-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)82 @ VGS = 10V5.1 Low thermal impedance 60115 @ VGS = 4.5V4.3 Fast switching speed Typical Applications: Motor Drives Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMUM RATINGS (TA =

 9.1. Size:320K  analog power
am4401p.pdf pdf_icon

AM4400NE

Analog Power AM4401PP-Channel 150-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)160 @ VGS = -10V -3.6 Low thermal impedance -150170 @ VGS = -5.5V -3.5 Fast switching speed Typical Applications: SOIC-8 White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABS

 9.2. Size:203K  analog power
am4409p.pdf pdf_icon

AM4400NE

Analog Power AM4409PP-Channel 20-V (D-S) MOSFETPRODUCT SUMMARYThese miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures VDS (V) rDS(on) m()ID (A)minimal power loss and conserves energy, making 20 @ VGS = -4.5V 10.2this device ideal for use in power management circuitry. Typical applications are PWMDC-DC -20 29 @ VGS = -2.5V 8.5converte

Otros transistores... AM4302N , AM4362N , AM4380N , AM4390N , AM4392N , AM4394N , AM4396N , AM4400N , RU6888R , AM4401P , AM4402N , AM4403 , AM4403P , AM4404N , AM4407 , AM4407P , AM4407PE .

History: HGP170N10A | MTP3401N3 | APT6015B2VFRG | AOD424G | PM567EA | DMN313DLT | APT6015JVFR

 

 
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