AM4420N MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: AM4420N
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Máxima disipación de potencia (Pd): 3.1 W
   Voltaje máximo drenador - fuente |Vds|: 20 V
   Voltaje máximo fuente - puerta |Vgs|: 8 V
   Corriente continua de drenaje |Id|: 30 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Tensión umbral entre puerta y fuente |Vgs(th)|: 0.4 V
   Carga de la puerta (Qg): 133 nC
   Tiempo de subida (tr): 61 nS
   Conductancia de drenaje-sustrato (Cd): 1130 pF
   Resistencia entre drenaje y fuente RDS(on): 0.0023 Ohm
   Paquete / Cubierta: SO-8

Búsqueda de reemplazo de MOSFET AM4420N

AM4420N Datasheet (PDF)

..1. Size:317K analog power
am4420n.pdf

Analog Power AM4420NN-Channel 20-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)2.3 @ VGS = 4.5V30 Low thermal impedance 202.7 @ VGS = 2.5V28 Fast switching speed Typical Applications: SO-8 Power Routing Li Ion Battery Packs Level Shifting and Driver Circuits ABSOLUTE MAXIMUM RATIN

8.1. Size:308K ait semi
am4420.pdf

AiT Semiconductor Inc. AM4420 www.ait-ic.com MOSFET 30V N-CHANNEL ENHANCEMENT MODE DESCRIPTION FEATURES The AM4420 is the N-Channel logic enhancement 30V/13A, R = 8m@V = 10V DS(ON) GSmode power field effect transistor are produced 30V/12A, R = 12m@V = 4.5V DS(ON) GSusing high cell density, This high density process Super high density cell design for extremely low

9.1. Size:172K analog power
am4424n.pdf

Analog Power AM4424NN-Channel 20-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low VDS (V) rDS(on) m()ID (A)rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 22 @ VGS = 4.5V 9.7converters and power management in portable and 20battery-powered products s

9.2. Size:315K analog power
am4426n.pdf

Analog Power AM4426NN-Channel 20-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)5.5 @ VGS = 4.5V16 Low thermal impedance 207 @ VGS = 2.5V12 Fast switching speed Typical Applications: SO-8 Load Switches DC/DC Conversion Motor Drives ABSOLUTE MAXIMUM RATINGS (TA = 25C UNLESS OTHERWIS

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

Liste

Recientemente añadidas las descripciónes de los transistores: