AM4430N MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AM4430N

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 3.1 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V

|Id|ⓘ - Corriente continua de drenaje: 13 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 9 nS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0135 Ohm

Encapsulados: SOIC-8

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AM4430N datasheet

 ..1. Size:160K  analog power
am4430n.pdf pdf_icon

AM4430N

Analog Power AM4430N N-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a PRODUCT SUMMARY high cell density trench process to provide low VDS (V) rDS(on) m( ) ID (A) rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 13.5 @ VGS = 4.5V 13 converters and power management in portable and 30 20 @ VGS = 2.5V 11 batter

 9.1. Size:392K  analog power
am4437p.pdf pdf_icon

AM4430N

Analog Power AM4437P P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID (A) Low r trench technology DS(on) 10.5 @ VGS = -10V -14 Low thermal impedance -30 16 @ VGS = -4.5V -11 Fast switching speed Typical Applications SO-8 Load Switches DC/DC Conversion Motor Drives ABSOLUTE MAXIMUM RATINGS (TA = 25 C UNLESS OT

 9.2. Size:159K  analog power
am4434n.pdf pdf_icon

AM4430N

Analog Power AM4434N N-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARY rDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) m( )ID (A) dissipation. Typical applications are DC-DC converters and power management in portable and 6 @ VGS = 4.5V 18.6 30 battery-powered products such

 9.3. Size:87K  analog power
am4438n.pdf pdf_icon

AM4430N

Analog Power AM4438N N-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a PRODUCT SUMMARY high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) m( ) ID (A) dissipation. Typical applications are DC-DC 32 @ VGS = 4.5V 8.1 converters and power management in portable and 30 battery-powered products su

Otros transistores... AM4407PE, AM4409P, AM4415P, AM4417P, AM4420, AM4420N, AM4424N, AM4426N, AOD4184A, AM4431P, AM4432N, AM4434N, AM4435, AM4436N, AM4438N, AM4460NT, AM4462N