AM4480N MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AM4480N
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 3.1 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 80 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 7.1 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 24 nS
Cossⓘ - Capacitancia de salida: 129 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.041 Ohm
Encapsulados: SO-8
Búsqueda de reemplazo de AM4480N MOSFET
- Selecciónⓘ de transistores por parámetros
AM4480N datasheet
am4480n.pdf
Analog Power AM4480N N-Channel 80-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID(A) Low r trench technology DS(on) 41 @ VGS = 10V 7.1 Low thermal impedance 80 57 @ VGS = 4.5V 6.1 Fast switching speed Typical Applications White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMUM RATINGS
am4481p.pdf
Analog Power AM4481P P-Channel 80-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a PRODUCT SUMMARY high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) m( ) ID (A) dissipation. Typical applications are DC-DC 126 @ VGS = -10V 6.8 converters and power management in portable and -80 battery-powered product
am4482n.pdf
Analog Power AM4482N N-Channel 80-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID(A) Low r trench technology DS(on) 36 @ VGS = 10V 7.6 Low thermal impedance 80 43 @ VGS = 4.5V 7.0 Fast switching speed Typical Applications White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMUM R
Otros transistores... AM4436N, AM4438N, AM4460NT, AM4462N, AM4463P, AM4466N, AM4470N, AM4472N, 50N06, AM4481P, AM4482N, AM4490N, AM4490NE, AM4492N, AM4494N, AM4499P, AM4502AC
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