AM4490NE Todos los transistores

 ..1. Size:314K  analog power
 am4490ne.pdf

Analog Power AM4490NE N-Channel 100-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID(A) Low r trench technology DS(on) 78 @ VGS = 10V 5.2 Low thermal impedance 100 92 @ VGS = 4.5V 4.8 Fast switching speed Typical Applications PoE Power Sourcing Equipment PoE Powered Devices Telecom DC/DC converters White LED boost conv

 7.1. Size:111K  analog power
 am4490n.pdf

Analog Power AM4490N N-Channel 100-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a PRODUCT SUMMARY high cell density trench process to provide low VDS (V) rDS(on) m( ) ID (A) rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 78 @ VGS = 10V 5.2 converters and power management in portable and 100 92 @ VGS = 4.5V 4.8 batte

 9.1. Size:326K  analog power
 am4492n.pdf

Analog Power AM4492N N-Channel 100-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID(A) Low r trench technology DS(on) 26 @ VGS = 10V 9 Low thermal impedance 100 36 @ VGS = 4.5V 7.6 Fast switching speed Typical Applications White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMUM

 9.2. Size:314K  analog power
 am4494n.pdf

Analog Power AM4494N N-Channel 100-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID(A) Low r trench technology DS(on) 18 @ VGS = 10V 11 Low thermal impedance 100 23 @ VGS = 5.5V 10 Fast switching speed Typical Applications White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMUM R

 9.3. Size:322K  analog power
 am4499p.pdf

Analog Power AM4499P P-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID(A) Low r trench technology DS(on) 45 @ VGS = -10V -6.8 Low thermal impedance -60 60 @ VGS = -4.5V -5.9 Fast switching speed Typical Applications White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMU

 9.4. Size:2330K  cn vbsemi
 am4492n.pdf

AM4492N www.VBsemi.tw N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.040 at VGS = 10 V 6.4 Extremely Low Qgd for Switching Losses 100 23 nC 0.047 at VGS = 8 V 5.5 100 % Rg Tested 100 % Avalanche Tested Compliant to RoHS Directive 2002/95/EC D APPLICATIONS SO-8

 9.5. Size:2050K  cn vbsemi
 am4499p.pdf

AM4499P www.VBsemi.tw P-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) 100 % UIS Tested 0.0195 at VGS = - 10 V - 10 APPLICATIONS - 60 76 nC 0.0250 at VGS = - 4.5 V - 9 Load Switch S SO-8 SD 1 8 G SD 2 7 SD 3 6 GD 4 5 D Top View P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 C, unl