AM4825P MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AM4825P
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 3.1 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 25 V
|Id|ⓘ - Corriente continua de drenaje: 11.5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 13 nS
Cossⓘ - Capacitancia de salida: 600 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.013 Ohm
Encapsulados: SOIC-8
Búsqueda de reemplazo de AM4825P MOSFET
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AM4825P datasheet
am4825p.pdf
Analog Power AM4825P P-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a PRODUCT SUMMARY high cell density trench process to provide low VDS (V) rDS(on) m( )ID (A) rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 13 @ VGS = -10V -11.5 -30 converters and power management in portable and 19 @ VGS = -4.5V -9.3
am4825p.pdf
AM4825P www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Available 0.0125 at VGS = - 10 V - 11.6 TrenchFET Power MOSFET - 30 22 nC 100 % Rg Tested 0.0180 at VGS = - 4.5 V - 10 100 % UIS Tested APPLICATIONS Load Switches S - Notebook PCs SO-8 - Desktop PCs
am4825pe.pdf
Analog Power AM4825PE P-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a PRODUCT SUMMARY high cell density trench process to provide low VDS (V) rDS(on) m( )ID (A) rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 13 @ VGS = -10V -11.5 -30 converters and power management in portable and 19 @ VGS = -4.5V -9.3
Otros transistores... AM4542C, AM4543C, AM4545C, AM4560C, AM4599C, AM45N06-16D, AM4811P, AM4812, 4435, AM4825PE, AM4830NS, AM4832N, AM4835EP, AM4835P, AM4840N, AM4841P, AM4842N
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