2SK2654 Todos los transistores

 ..1. Size:257K  inchange semiconductor
 2sk2654.pdf

isc N-Channel MOSFET Transistor 2SK2654 FEATURES Drain Source Voltage- V = 900V(Min) DSS Static Drain-Source On-Resistance R = 2 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =

 0.1. Size:267K  fuji
 2sk2654-01.pdf

N-channel MOS-FET 2SK2654-01 FAP-IIS Series 900V 2 8A 150W > Features > Outline Drawing - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = 30V Guarantee - Repetitive Avalanche Rated > Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplifier > Maximum Ratings and Characteristic

 8.1. Size:30K  panasonic
 2sk2659.pdf

Power F-MOS FETs 2SK2659 2SK2659 Silicon N-Channel Power F-MOS Unit mm 5.0 0.1 Features 10.0 0.2 1.0 Avalanche energy capability guaranteed High-speed switching 90 Low ON-resistance No secondary breakdown 1.2 0.1 C1.0 2.25 0.2 Low-voltage drive 0.65 0.1 0.35 0.1 1.05 0.1 Radial taping possible 0.55 0.1 0.55 0.1 Applications Non-contact relay No

 8.2. Size:304K  fuji
 2sk2653-01r.pdf

N-channel MOS-FET 2SK2653-01R FAP-IIS Series 900V 2,5 6A 80W > Features > Outline Drawing - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = 30V Guarantee - Repetitive Avalanche Rated > Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplifier > Maximum Ratings and Characterist

 8.3. Size:327K  fuji
 2sk2651-01mr.pdf

N-channel MOS-FET 2SK2651-01MR FAP-IIS Series 900V 2,5 6A 50W > Features > Outline Drawing - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = 30V Guarantee - Repetitive Avalanche Rated > Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplifier > Maximum Ratings and Characteris

 8.4. Size:291K  fuji
 2sk2655-01r.pdf

N-channel MOS-FET 2SK2655-01R FAP-IIS Series 900V 2 8A 100W > Features > Outline Drawing - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = 30V Guarantee - Repetitive Avalanche Rated > Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplifier > Maximum Ratings and Characteristi

 8.5. Size:312K  fuji
 2sk2652-01.pdf

N-channel MOS-FET 2SK2652-01 FAP-IIS Series 900V 2,5 6A 125W > Features > Outline Drawing - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = 30V Guarantee - Repetitive Avalanche Rated > Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplifier > Maximum Ratings and Characterist

 8.6. Size:251K  inchange semiconductor
 2sk2652.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor 2SK2652 FEATURES Drain Source Voltage- V = 900V(Min) DSS Static Drain-Source On-Resistance R = 2.5 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose applications.