AM4832N MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AM4832N

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 3.1 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 27 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 30 nS

Cossⓘ - Capacitancia de salida: 952 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.003 Ohm

Encapsulados: SO-8

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AM4832N datasheet

 ..1. Size:310K  analog power
 am4832n.pdf pdf_icon

AM4832N

Analog Power AM4832N N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID (A) Low r trench technology DS(on) 3 @ VGS = 10V 27 Low thermal impedance 30 4.2 @ VGS = 4.5V 23 Fast switching speed Typical Applications DC/DC Conversion Power Routing Motor Drives ABSOLUTE MAXIMUM RATINGS (TA = 25 C UNLESS OTHERWISE NOTE

 9.1. Size:217K  analog power
 am4830ns.pdf pdf_icon

AM4832N

Analog Power AM4830NS N-Channel 30-V (D-S) MOSFET MOSFET PRODUCT SUMMARY VDS (V) rDS(on) m( )ID (A) These miniature surface mount MOSFETs utilize a high cell density trench process to provide low 13.5 @ VGS = 10V 13 30 rDS(on) and to ensure minimal power loss and heat 20 @ VGS = 4.5V 11 dissipation. Typical applications are DC-DC converters and power management in portable and

 9.2. Size:320K  analog power
 am4835p.pdf pdf_icon

AM4832N

Analog Power AM4835P P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID(A) Low r trench technology DS(on) 19 @ VGS = -10V -9.5 Low thermal impedance -30 30 @ VGS = -4.5V -7.5 Fast switching speed Typical Applications White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMU

 9.3. Size:246K  analog power
 am4835ep.pdf pdf_icon

AM4832N

Analog Power AM4835EP P-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a PRODUCT SUMMARY high cell density trench process to provide low VDS (V) rDS(on) m( ) ID (A) rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 19 @ VGS = -10V -9.5 -30 converters and power management in portable and 30 @ VGS = -4.5V -7.5

MOSTRAR MÁS

Otros transistores... AM4560C, AM4599C, AM45N06-16D, AM4811P, AM4812, AM4825P, AM4825PE, AM4830NS, K4145, AM4835EP, AM4835P, AM4840N, AM4841P, AM4842N, AM4844NE, AM4874N, AM4890N