AM4835P MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: AM4835P
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 3.1 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 25 V
   |Id|ⓘ - Corriente continua de drenaje: 9.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 16 nS
   Cossⓘ - Capacitancia de salida: 408 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.019 Ohm
   Paquete / Cubierta: SO-8

Búsqueda de reemplazo de MOSFET AM4835P

AM4835P Datasheet (PDF)

..1. Size:320K analog power
am4835p.pdf

Analog Power AM4835PP-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)19 @ VGS = -10V -9.5 Low thermal impedance -3030 @ VGS = -4.5V -7.5 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMU

..2. Size:1779K cn vbsemi
am4835p.pdf

AM4835Pwww.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.018 at VGS = - 10 V - 9.0 TrenchFET Power MOSFET- 30 13 nC 100 % Rg Tested0.024 at VGS = - 4.5 V - 7.8APPLICATIONS Load Switch Battery SwitchS SO-8S1 8 DG S D2 7S3 6 DG

8.1. Size:246K analog power
am4835ep.pdf

Analog Power AM4835EPP-Channel 30-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low VDS (V) rDS(on) m() ID (A)rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 19 @ VGS = -10V -9.5-30converters and power management in portable and 30 @ VGS = -4.5V -7.5

9.1. Size:217K analog power
am4830ns.pdf

Analog Power AM4830NSN-Channel 30-V (D-S) MOSFET MOSFET PRODUCT SUMMARYVDS (V) rDS(on) m()ID (A)These miniature surface mount MOSFETs utilize a high cell density trench process to provide low 13.5 @ VGS = 10V 1330rDS(on) and to ensure minimal power loss and heat 20 @ VGS = 4.5V 11dissipation. Typical applications are DC-DC converters and power management in portable and

9.2. Size:310K analog power
am4832n.pdf

Analog Power AM4832NN-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)3 @ VGS = 10V27 Low thermal impedance 304.2 @ VGS = 4.5V23 Fast switching speed Typical Applications: DC/DC Conversion Power Routing Motor Drives ABSOLUTE MAXIMUM RATINGS (TA = 25C UNLESS OTHERWISE NOTE

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

Liste

Recientemente añadidas las descripciónes de los transistores: