AM4915P Todos los transistores

 ..1. Size:312K  analog power
 am4915p.pdf

Analog Power AM4915P Dual P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID (A) Low r trench technology DS(on) 17.5 @ VGS = -10V -9.0 Low thermal impedance -30 23 @ VGS = -4.5V -7.9 Fast switching speed SO-8 Typical Applications Load Switches DC/DC Conversion Motor Drives ABSOLUTE MAXIMUM RATINGS (TA = 25 C UN

 9.1. Size:191K  analog power
 am4910n.pdf

Analog Power AM4910N Dual N-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a PRODUCT SUMMARY high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) m( )ID (A) dissipation. Typical applications are DC-DC 13.5 @ VGS = 10V 10 converters and power management in portable and 30 battery-powered produ

 9.2. Size:326K  analog power
 am4917p.pdf

Analog Power AM4917P P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID(A) Low r trench technology DS(on) 17.5 @ VGS = -4.5V -9.0 Low thermal impedance -20 23 @ VGS = -2.5V -7.9 Fast switching speed 48 @ VGS = -1.8V -5.5 Typical Applications White LED boost converters Automotive Systems Industrial DC/DC Conversion C

 9.3. Size:203K  analog power
 am4919p.pdf

Analog Power AM4919P P-Channel 20-V (D-S) MOSFET These miniature surface mount MOSFETs utilize PRODUCT SUMMARY High Cell Density process. Low rDS(on) assures VDS (V) rDS(on) m( )ID (A) minimal power loss and conserves energy, making this device ideal for use in power management 21 @ VGS = -4.5V 8.2 circuitry. Typical applications are PWMDC-DC -20 35 @ VGS = -2.5V 6.4 converters,