AM4962NE Todos los transistores

 

AM4962NE MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AM4962NE
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.1 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 6.4 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 8 nS
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.035 Ohm
   Paquete / Cubierta: SOIC-8

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AM4962NE Datasheet (PDF)

 ..1. Size:219K  analog power
am4962ne.pdf

AM4962NE
AM4962NE

Analog Power AM4962NEN-Channel 60-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARYrDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) m()ID (A)dissipation. Typical applications are DC-DC 35 @ VGS = 10V 6.4converters and power management in portable and 60battery-powered products s

 9.1. Size:309K  analog power
am4963p.pdf

AM4962NE
AM4962NE

Analog Power AM4963PDual P-Channel 60-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)120 @ VGS = -10V -3.5 Low thermal impedance -60180 @ VGS = -4.5V -2.8 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE

 9.2. Size:205K  analog power
am4960n.pdf

AM4962NE
AM4962NE

Analog Power AM4960NN-Channel 60-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARYrDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) m()ID (A)dissipation. Typical applications are DC-DC converters and power management in portable and 89 @ VGS = 10V 4.060battery-powered products such

 9.3. Size:314K  analog power
am4964nt.pdf

AM4962NE
AM4962NE

Analog Power AM4964NTN-Channel 60-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)50 @ VGS = 10V5.3 Low thermal impedance 6060 @ VGS = 4.5V4.9 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMUM

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