AM4990N MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: AM4990N
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.1 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 10 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1 V
   Qgⓘ - Carga de la puerta: 20 nC
   trⓘ - Tiempo de subida: 9 nS
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.081 Ohm
   Paquete / Cubierta: SOIC-8

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AM4990N Datasheet (PDF)

..1. Size:160K analog power
am4990n.pdf

Analog Power AM4990NDual N-Channel 100-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) m() ID (A)dissipation. Typical applications are DC-DC 81 @ VGS = 10V 4.2converters and power management in portable and 100battery-powered pro

0.1. Size:318K analog power
am4990ne.pdf

Analog Power AM4990NEDual N-Channel 100-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)81 @ VGS = 10V4.2 Low thermal impedance 10092 @ VGS = 4.5V4.0 Fast switching speed Typical Applications: PoE Power Sourcing Equipment PoE Powered Devices Telecom DC/DC converters White LED boost

9.1. Size:194K analog power
am4998n.pdf

Analog Power AM4998NN-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low VDS (V) rDS(on) m()ID (A)rDS(on) and to ensure minimal power loss and heat 32 @ VGS = 4.5V 6.5dissipation. Typical applications are DC-DC 30converters and power management in portable and 40 @ VGS = 2.5V 5.8batte

9.2. Size:320K analog power
am4992n.pdf

Analog Power AM4992NN-Channel 100-V (D-S) MOSFET PRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)430 @ VGS = 10V1.8 Low thermal impedance 100480 @ VGS = 4.5V1.7 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXI

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

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