80N08A Todos los transistores

 ..1. Size:218K  inchange semiconductor
 80n08a.pdf

isc N-Channel MOSFET Transistor 80N08A FEATURES Drain Current I = 80A@ T =25 D C Drain Source Voltage V = 80V(Min) DSS Static Drain-Source On-Resistance R = 11m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power switching applications Hard switched and high frequency c

 0.1. Size:734K  blue-rocket-elect
 brb80n08a.pdf

BRB80N08A Rev.C Jun.-2019 DATA SHEET / Descriptions TO-263 N MOS N-CHANNEL MOSFET in a TO-263 Plastic Package. / Features , , Low gate charge, low crss, fast switching. Halogen-free Product. / Applications DC/DC These devi

 0.2. Size:1120K  blue-rocket-elect
 br80n08a.pdf

BR80N08A Rev.C Jul.-2018 DATA SHEET / Descriptions TO-220 N MOS N-CHANNEL MOSFET in a TO-220 Plastic Package. / Features , , Low gate charge, low crss, fast switching. / Applications DC/DC These devices are well suited for high efficienc

 0.3. Size:277K  feihonltd
 fhp80n08a.pdf

 0.4. Size:1244K  matsuki electric
 me80n08a me80n08a-g.pdf

ME80N08A/ME80N08A-G N-Channel 80V(D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON) 5m @VGS=10V The ME80N08A is the N-Channel logic enhancement mode power Super high density cell design for extremely low RDS(ON) field effect transistors are produced using high cell density, DMOS Exceptional on-resistance and maximum DC current trench technology. This high density p

 0.5. Size:871K  matsuki electric
 me80n08ah me80n08ah-g.pdf

ME80N08AH/ME80N08AH-G 80V N-Channel Enhancement Mode GENERAL DESCRIPTION FEATURES RDS(ON) 5m @VGS=10V The ME80N08AH is the N-Channel logic enhancement mode power Super high density cell design for extremely low RDS(ON) field effect transistors are produced using high cell density, DMOS Exceptional on-resistance and maximum DC current trench technology. This high

 0.6. Size:1055K  matsuki electric
 me80n08af me80n08af-g.pdf

ME80N08AF/ME80N08AF-G N-Channel 80V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON) 5m @VGS=10V The ME80N08AF is the N-Channel logic enhancement mode power Super high density cell design for extremely low RDS(ON) field effect transistors are produced using high cell density, DMOS Exceptional on-resistance and maximum DC current trench technology. This high densi

 0.7. Size:747K  cn vanguard
 vs80n08at.pdf

VS80N08AT 80V/83A N-Channel Advanced Power MOSFET V DS 80 V Features R DS(on),TYP@ VGS=10 V 6.8 m N-Channel 10V Logic Level Control I D 83 A Enhancement mode Very low on-resistance RDS(on) @ VGS=10 V 100% Avalanche test TO-220AB Pb-free lead plating; RoHS compliant Tape and reel Part ID Package Type Marking information VS80N08AT TO-220AB 8

 0.8. Size:377K  cn wuxi unigroup
 tmb80n08a.pdf

TMB80N08A Wuxi Unigroup Microelectronics Company 80V N-Channel Trench MOSFET FEATURES High Density Cell Design for Ultra Low Rdson Fully Characterized Avalanche Voltage and Current Good Stability with High EAS Excellent Package for Good Heat Dissipation APPLICATIONS Power Switching Application Hard Switched and High Frequency Circuits Uninterru

 0.9. Size:670K  cn wuxi unigroup
 tmb80n08a tmp80n08a.pdf

TMB80N08A,TMP80N08A Wuxi Unigroup Microelectronics CO.,LTD. 80V N-Channel Trench MOSFET(Preliminary) Product Summary General Description Trench Power Technology VDS 80V Low RDS(ON) ID (at VGS=10V) 80A Low Gate Charge Optimized for fast-switching Applications RDS(ON) (at VGS=10V)