AM50N10-18D Todos los transistores

 

AM50N10-18D MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AM50N10-18D
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 50 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 43 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 42 nS
   Cossⓘ - Capacitancia de salida: 389 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.018 Ohm
   Paquete / Cubierta: TO-252

 Búsqueda de reemplazo de MOSFET AM50N10-18D

 

AM50N10-18D Datasheet (PDF)

 ..1. Size:288K  analog power
am50n10-18d.pdf

AM50N10-18D
AM50N10-18D

Analog Power AM50N10-18DN-Channel 100-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)18 @ VGS = 10V43 Low thermal impedance 10024 @ VGS = 5.5V37 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIM

 5.1. Size:404K  analog power
am50n10-14i.pdf

AM50N10-18D
AM50N10-18D

Analog Power AM50N10-14IN-Channel 100-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)14 @ VGS = 10V Low thermal impedance 10050a16 @ VGS = 4.5V Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMUM

 6.1. Size:307K  analog power
am50n10-55fp.pdf

AM50N10-18D
AM50N10-18D

Analog Power AM50N10-55FPN-Channel 100-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)42 @ VGS = 10V Low thermal impedance 10090a48 @ VGS = 4.5V Fast switching speed TO-247 Typical Applications: LED Inverter Circuits DC/DC Conversion Circuits DRAIN Motor drives connected to TAB A

 9.1. Size:289K  analog power
am50n06-15d.pdf

AM50N10-18D
AM50N10-18D

Analog Power AM50N06-15DN-Channel 60-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)13 @ VGS = 10V51 Low thermal impedance 6018 @ VGS = 4.5V44 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMUM

 9.2. Size:106K  analog power
am50n06-20d.pdf

AM50N10-18D
AM50N10-18D

Analog Power AM50N06-20DN-Channel 60-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low VDS (V) rDS(on) m() ID (A)rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 20 @ VGS = 10V 41converters and power management in portable and 6029 @ VGS = 4.5V 34batte

 9.3. Size:146K  analog power
am50n03-12i.pdf

AM50N10-18D
AM50N10-18D

Analog Power AM50N03-12IN-Channel 30-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize PRODUCT SUMMARYHigh Cell Density process. Low rDS(on) assures VDS (V) rDS(on) m() ID (A)minimal power loss and conserves energy, making this device ideal for use in power management 13 @ VGS = 10V 51circuitry. Typical applications are PWMDC-DC 3020 @ VGS = 4.5V 41converters,

 9.4. Size:361K  analog power
am50n03-12d.pdf

AM50N10-18D
AM50N10-18D

Analog Power AM50N03-12DN-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)13 @ VGS = 10V51 Low thermal impedance 3020 @ VGS = 4.5V41 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMUM

 9.5. Size:299K  analog power
am50n08-14d.pdf

AM50N10-18D
AM50N10-18D

Analog Power AM50N08-14DN-Channel 80-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)11 @ VGS = 10V55 Low thermal impedance 8013 @ VGS = 4.5V51 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMUM

 9.6. Size:923K  jiaensemi
jfam50n50c.pdf

AM50N10-18D
AM50N10-18D

JFAM50N50C Silicon N-Channel Power MOSFET VDSS(TC=150) 500 V ID 50 A Features PD(TC=25) 500 W Fast Switching RDS(ON) 0.082 ESD Improved Capability Low Gate Charge (Typical Data: 140nC) Low Reverse transfer capacitances(Typical: 80pF) 100% Single Pulse avalanche energy Test Applications: Power switch circuit of PC POWER Absolute

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