AM50P04-16PCFM MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: AM50P04-16PCFM
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 60 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 50 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 10 nS
   Cossⓘ - Capacitancia de salida: 256 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.016 Ohm
   Paquete / Cubierta: TO-220CFM

Búsqueda de reemplazo de MOSFET AM50P04-16PCFM

AM50P04-16PCFM Datasheet (PDF)

..1. Size:291K analog power
am50p04-16pcfm.pdf

Analog Power AM50P04-16PCFMP-Channel 40-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)16 @ VGS = -10V -50 Low thermal impedance -4028 @ VGS = -4.5V -38 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE M

6.1. Size:66K analog power
am50p04-20d.pdf

Analog Power AM50P04-20DP-Channel 40-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) m() ID (A)dissipation. Typical applications are DC-DC 20 @ VGS = -10V 41converters and power management in portable and -40battery-powered produ

8.1. Size:139K analog power
am50p02-16d.pdf

Analog Power AM50P02-16DP-Channel 20-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) m() ID (A)dissipation. Typical applications are DC-DC 18 @ VGS = -4.5V 44converters and power management in portable and -20battery-powered prod

8.2. Size:288K analog power
am50p03-09d.pdf

Analog Power AM50P03-09DP-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)9 @ VGS = -10V -61 Low thermal impedance -3013 @ VGS = -4.5V -51 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXI

8.3. Size:287K analog power
am50p06-15d.pdf

Analog Power AM50P06-15DP-Channel 60-V (D-S) MOSFET PRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)17 @ VGS = -10V -44 Low thermal impedance -6023 @ VGS = -4.5V -38 Fast switching speed Typical Applications: PoE Power Sourcing Equipment PoE Powered Devices Telecom DC/DC converters White LED boost c

8.4. Size:139K analog power
am50p02-09d.pdf

Analog Power AM50P02-09DP-Channel 20-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures PRODUCT SUMMARYminimal power loss and conserves energy, making VDS (V) rDS(on) m()ID (A)this device ideal for use in power management 9 @ VGS = -4.5V 18circuitry. Typical applications are PWMDC-DC -20converters, power management i

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