IXFH11N80 Datasheet. Equivalente

 ..1. Size:426K  1
 ixfh11n80 ixfm11n80 ixfh13n80 ixfm13n80 ixfh14n80 ixfm14n80 ixfh15n80 ixfm15n80.pdf

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 ixfh11n80 ixfh13n80 ixfm11n80 ixfm13n80.pdf

VDSS ID25 RDS(on) HiPerFETTM IXFH/IXFM 11 N80 800 V 11 A 0.95 W Power MOSFETs IXFH/IXFM 13 N80 800 V 13 A 0.80 W trr 250 ns N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25 C to 150 C 800 V VDGR TJ = 25 C to 150 C; RGS = 1 MW 800 V VGS Continuous 20 V (TAB) VGSM Transient 30 V ID25 TC = 2

 8.1. Size:309K  ixys
 ixfh110n10p ixfv110n10p.pdf

IXFH 110N10P VDSS = 100 V PolarHTTM HiPerFET IXFV 110N10P ID25 = 110 A Power MOSFET IXFV 110N10PS RDS(on) 15 m N-Channel Enhancement Mode trr 150 ns Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-247 (IXFH) VDSS TJ = 25 C to 175 C 100 V VDGR TJ = 25 C to 175 C; RGS = 1 M 100

 9.1. Size:53K  ixys
 ixfh12n90q ixft12n90q.pdf

IXFH 12N90Q VDSS = 900 V HiPerFETTM IXFT 12N90Q ID25 = 12 A Power MOSFETs RDS(on) = 0.9 W Q Class N-Channel Enhancement Mode trr 200 ns Avalanche Rated Low Qg, High dv/dt Preliminary data sheet Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25 C to 150 C 900 V VDGR TJ = 25 C to 150 C; RGS = 1 MW 900 V VGS Continuous 20 V VGSM Transient 30 V ID25 TC

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 ixfh18n100q3 ixft18n100q3.pdf

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 ixfh150n15p ixfk150n15p.pdf

IXFH 150N15P PolarHTTM HiPerFET VDSS = 150 V IXFK 150N15P Power MOSFET ID25 = 150 A RDS(on) 13 m N-Channel Enhancement Mode Fast Intrinsic Diode trr 200 ns Avalanche Rated Symbol Test Conditions Maximum Ratings TO-247 (IXFH) VDSS TJ = 25 C to 175 C 150 V VDGR TJ = 25 C to 175 C; RGS = 1 M 150 V VGS Contin

 9.4. Size:173K  ixys
 ixfa14n60p3 ixfh14n60p3.pdf

Advance Technical Information Polar3 TM HiPerFETTM VDSS = 600V IXFA14N60P3 Power MOSFETs ID25 = 14A IXFP14N60P3 RDS(on) 540m IXFH14N60P3 N-Channel Enhancement Mode TO-263 AA (IXFA) Avalanche Rated Fast Intrinsic Rectifier G S D (Tab) Symbol Test Conditions Maximum Ratings TO-220AB (IXFP) VDSS TJ = 25 C to 150 C 600 V VDGR TJ = 25 C to 15

 9.5. Size:182K  ixys
 ixfh150n17t2 ixft150n17t2.pdf

Advance Technical Information TrenchT2TM HiperFETTM VDSS = 175V IXFH150N17T2 ID25 = 150A Power MOSFET IXFT150N17T2 RDS(on) 12.0m trr 160ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 175 C 175 V G VDGR TJ = 25 C to 175 C, RG

 9.6. Size:177K  ixys
 ixfh120n15p ixft120n15p.pdf

IXFH 120N15P VDSS = 150 V PolarHTTM HiPerFET IXFT 120N15P ID25 = 120 A Power MOSFET RDS(on) 16 m trr 200 ns N-Channel Enhancement Mode Avalanche Energy Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings TO-247 (IXFH) VDSS TJ = 25 C to 175 C 150 V VDGR TJ = 25 C to 175 C; RGS = 1 M 150 V VDSS

 9.7. Size:252K  ixys
 ixfa16n50p ixfh16n50p ixfp16n50p.pdf

IXFA 16N50P VDSS = 500 V PolarHVTM HiPerFET IXFH 16N50P ID25 = 16 A Power MOSFET IXFP 16N50P RDS(on) 400 m trr 200 ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings TO-263 (IXTA) VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 150 C; RGS = 1 M 500 V

 9.8. Size:278K  ixys
 ixfp12n65x2m ixfp12n65x2 ixfa12n65x2 ixfh12n65x2.pdf

X2-Class HiPERFET VDSS = 650V IXFA12N65X2 Power MOSFET ID25 = 12A IXFP12N65X2 RDS(on) 310m IXFH12N65X2 N-Channel Enhancement Mode Avalanche Rated TO-263 (IXFA) G S D (Tab) Symbol Test Conditions Maximum Ratings TO-220 (IXFP) VDSS TJ = 25 C to 150 C 650 V VDGR TJ = 25 C to 150 C, RGS = 1M 650 V VGSS Continuous 30 V VGSM Tr

 9.9. Size:112K  ixys
 ixfh16n90 ixfx16n90.pdf

IXFH16N90 VDSS = 900 V HiPerFETTM IXFX16N90 ID25 = 16 A Power MOSFETs RDS(on) = 0.65 W N-Channel Enhancement Mode t 200 ns High dv/dt, Low t , HDMOSTM Family rr rr Preliminary data Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25 C to 150 C 900 V VDGR TJ = 25 C to 150 C; RGS = 1 M 900 V (TAB) VGS Continuous 20 V VGSM Transient 30 V ID25 TC = 2

 9.10. Size:166K  ixys
 ixfa16n60p3 ixfh16n60p3 ixfp16n60p3.pdf

Advance Technical Information Polar3 TM HiPerFETTM VDSS = 600V IXFA16N60P3 Power MOSFETs ID25 = 16A IXFP16N60P3 RDS(on) 440m IXFH16N60P3 N-Channel Enhancement Mode TO-263 AA (IXFA) Avalanche Rated Fast Intrinsic Rectifier G S D (Tab) TO-220AB (IXFP) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 600 V VDGR TJ = 25 C to 15

 9.11. Size:257K  ixys
 ixfa14n60p ixfh14n60p ixfp14n60p.pdf

IXFA 14N60P VDSS = 600 V PolarHVTM HiPerFET IXFH 14N60P ID25 = 14 A Power MOSFET IXFP 14N60P RDS(on) 550 m N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-263 (IXFA) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 600 V G VDGR TJ = 25 C to 150 C; RGS = 1 M 600 V S (TAB) VGS Continuous 30 V V

 9.12. Size:95K  ixys
 ixfh100n25p.pdf

IXFH 100N25P VDSS = 250 V PolarHTTM HiPerFET ID25 = 100 A Power MOSFET RDS(on) 27 m N-Channel Enhancement Mode trr 200 ns Fast Intrinsic Diode Avalanche Rated TO-247 (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 250 V VDGR TJ = 25 C to 150 C; RGS = 1 M 250 V VGS Continuous 20 V G VGSM

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 ixfh10n100 ixfm10n100 ixfh12n100 ixfm12n100.pdf

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 ixfa18n65x2 ixfp18n65x2 ixfh18n65x2.pdf

X2-Class HiPerFETTM VDSS = 650V IXFA18N65X2 Power MOSFET ID25 = 18A IXFP18N65X2 RDS(on) 200m IXFH18N65X2 N-Channel Enhancement Mode Avalanche Rated TO-263 (IXFA) G S D (Tab) Symbol Test Conditions Maximum Ratings TO-220 VDSS TJ = 25 C to 150 C 650 V (IXFP) VDGR TJ = 25 C to 150 C, RGS = 1M 650 V VGSS Continuous 30 V VGS

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 ixfa18n60x ixfh18n60x ixfp18n60x.pdf

Preliminary Technical Information X-Class HiPerFETTM VDSS = 600V IXFA18N60X Power MOSFET ID25 = 18A IXFP18N60X RDS(on) 230m IXFH18N60X TO-263 AA (IXFA) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode G S D (Tab) TO-220AB (IXFP) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 600 V VDGR TJ = 25 C to

 9.16. Size:180K  ixys
 ixfh150n20t ixft150n20t.pdf

Advance Technical Information TrenchTM HiperFETTM VDSS = 200V IXFT150N20T Power MOSFETs ID25 = 150A IXFH150N20T RDS(on) 15m N-Channel Enhancement Mode Avalanche Rated TO-268 (IXFT) Fast Intrinsic Rectifier G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 200 V VDGR TJ = 25 C to 150 C, RGS = 1M 200 V TO-247 (IX

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 ixfh10n100q.pdf

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 ixfh10n90 ixfm10n90 ixfh12n90 ixfm12n90 ixfh13n90 ixfm13n90.pdf

VDSS ID25 RDS(on) HiPerFETTM IXFH/IXFM 10 N90 900 V 10 A 1.1 Power MOSFETs IXFH/IXFM 12 N90 900 V 12 A 0.9 IXFH/IXFT 13 N90 900 V 13 A 0.8 N-Channel Enhancement Mode 250 ns High dv/dt, Low trr, HDMOSTM Family trr TO-247 AD (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 1

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 ixfh15n60 ixfh20n60 ixfm15n60 ixfm20n60.pdf

VDSS ID25 RDS(on) HiPerFETTM IXFH/IXFM 15 N60 600 V 15 A 0.50 W Power MOSFETs IXFH/IXFM 20 N60 600 V 20 A 0.35 W trr 250 ns N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25 C to 150 C 600 V VDGR TJ = 25 C to 150 C; RGS = 1 MW 600 V (TAB) VGS Continuous 20 V VGSM Transient 30 V ID25 TC = 2

 9.20. Size:82K  ixys
 ixfh13n50 ixfm13n50.pdf

HiPerFETTM IXFH 13 N50 VDSS = 500 V Power MOSFETs IXFM 13 N50 ID (cont) = 13 A RDS(on) = 0.4 W N-Channel Enhancement Mode trr 250 ns High dv/dt, Low trr, HDMOSTM Family Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 150 C; RGS = 1 MW 500 V (TAB) VGS Continuous 20 V VGSM Transient 30 V ID25 TC = 25 C13 A TO-204 AA

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 ixfh13n80q ixft13n80q.pdf

IXFH 13N80Q VDSS = 800 V HiPerFETTM IXFT 13N80Q ID25 = 13 A Power MOSFETs RDS(on) = 0.70 W Q Class N-Channel Enhancement Mode trr 250 ns Avalanche Rated High dv/dt, Low Qg Preliminary data sheet TO-268 (D3) (IXFT) Case Style Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 800 V VDGR TJ = 25 C to 150 C; RGS = 1 MW 800 V G VGS Continuous 20 V (TAB) S VGSM

 9.22. Size:173K  ixys
 ixfa16n50p3 ixfh16n50p3 ixfp16n50p3.pdf

Advance Technical Information Polar3 TM HiPerFETTM VDSS = 500V IXFA16N50P3 Power MOSFETs ID25 = 16A IXFP16N50P3 RDS(on) 360m IXFH16N50P3 N-Channel Enhancement Mode TO-263 AA (IXFA) Avalanche Rated Fast Intrinsic Rectifier G S D (Tab) Symbol Test Conditions Maximum Ratings TO-220AB (IXFP) VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 15

 9.23. Size:179K  ixys
 ixfh12n90p ixfv12n90p-s.pdf

Preliminary Technical Information IXFH12N90P VDSS = 900V PolarTM Power MOSFET IXFV12N90P ID25 = 12A HiPerFETTM RDS(on) 900m IXFV12N90PS trr 300ns N-Channel Enhancement Mode Avalanche Rated PLUS220 (IXFV) Fast Intrinsic Diode G Symbol Test Conditions Maximum Ratings D S VDSS TJ = 25 C to 150 C 900 V D (TAB) VDGR TJ

 9.24. Size:177K  ixys
 ixfh140n10p ixft140n10p.pdf

IXFH 140N10P VDSS = 100 V PolarHVTM HiPerFET IXFT 140N10P ID25 = 140 A Power MOSFETs RDS(on) 11 m N-Channel Enhancement Mode trr 150 ns Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-247 (IXFH) VDSS TJ = 25 C to 175 C 100 V VDGR TJ = 25 C to 175 C; RGS = 1 M 100 V VGS Continu

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 ixft12n100q ixfh12n100q ixft10n100q ixfh10n100q.pdf

VDSS ID25 RDS(on) HiPerFETTM IXFH/IXFT12N100Q 1000 V 12 A 1.05 Power MOSFETs IXFH/IXFT10N100Q 1000 V 10 A 1.20 Q Class trr 250 ns N-Channel Enhancement Mode Avalanche Rated Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25 C to 150 C 1000 V VDGR TJ = 25 C to 150 C; RGS

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 ixfh15n80q ixft15n80q.pdf

IXFH 15N80Q VDSS = 800 V HiPerFETTM IXFT 15N80Q ID25 = 15 A Power MOSFETs RDS(on) = 0.60 W Q-Class trr 250 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25 C to 150 C 800 V VDGR TJ = 25 C to 150 C; RGS = 1 MW 800 V VGS Continuous 20 V VGSM Transient 30 V (TAB) ID25 TC = 25 C15 A IDM

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 ixfh14n100 ixft14n100 ixfx14n100 ixfh15n100 ixft15n100 ixfx15n100.pdf

VDSS ID25 RDS(on) HiPerFETTM IXFH/IXFT/IXFX14 N100 1000 V 14 A 0.75 W Power MOSFETs IXFH/IXFT/IXFX15 N100 1000 V 15 A 0.70 W trr 200 ns N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Preliminary data sheet TO-247 AD Symbol Test Conditions Maximum Ratings (IXFH) VDSS TJ = 25 C to 150 C 1000 V VDGR TJ = 25 C to 150 C; RGS = 1 MW 1000 V (TAB) VGS Continuous

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 ixfh14n80 ixfh15n80.pdf

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 ixfh170n10p ixfk170n10p.pdf

PolarTM HiperFETTM VDSS = 100V IXFH170N10P ID25 = 170A Power MOSFET IXFK170N10P RDS(on) 9m trr 150ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier TO-247 (IXFH) Symbol Test Conditions Maximum Ratings G D VDSS TJ = 25 C to 175 C 100 V Tab S VDGR TJ = 25 C to 175 C, RGS = 1M 100 V VGSS Conti

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 ixfh120n25t ixft120n25t.pdf

Preliminary Technical Information TrenchTM HiperFETTM VDSS = 250V IXFT120N25T Power MOSFETs ID25 = 120A IXFH120N25T RDS(on) 23m N-Channel Enhancement Mode Avalanche Rated TO-268 (IXFT) Fast Intrinsic Rectifier G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 250 V VDGR TJ = 25 C to 150 C, RGS = 1M 250 V TO-247

 9.31. Size:172K  ixys
 ixfh18n60p ixfv18n60p.pdf

IXFH 18N60P VDSS = 600 V PolarHVTM HiPerFET IXFV 18N60P ID25 = 18 A Power MOSFET IXFV 18N60PS RDS(on) 400 m N-Channel Enhancement Mode trr 200 ns Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25 C to 150 C 600 V VDGR TJ = 25 C to 150 C; RGS = 1 M 600 V VGS Co

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 ixfh12n120p ixfv12n120p ixfv12n120ps.pdf

IXFH12N120P VDSS = 1200V PolarTM Power MOSFET IXFV12N120P ID25 = 12A HiPerFETTM RDS(on) 1.35 IXFV12N120PS N-Channel Enhancement Mode trr 300ns Avalanche Rated Fast Intrinsic Diode PLUS220 (IXFV) G DS Symbol Test Conditions Maximum Ratings D (TAB) VDSS TJ = 25 C to 150 C 1200 V PLUS220SMD (IXFV_S) VDGR TJ = 25 C to 1

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 ixfh170n10p.pdf

isc N-Channel MOSFET Transistor IXFH170N10P FEATURES Drain Current I = 170A@ T =25 D C Drain Source Voltage V = 100V(Min) DSS Static Drain-Source On-Resistance R = 9m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive.