AM6924NHE MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Mr Wang 13602525365Analog Power AM6924NHEDual N-Channel Logical Level MOSFET13602525365These miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low VDS (V) rDS(on) (OHM) ID (A)rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 0.013 @ VGS = 4.5 V 7.9converters and power management

Analog Power AM6923PDual P-Channel 12-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low VDS (V) rDS(on) (OHM) ID (A)rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 0.022 @ VGS = -4.5V -5.7converters and power management in portable and -120.027 @ VGS = -2.5V

Analog Power AM6922NHN-Channel 20-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)18 @ VGS = 4.5V8.9 Low thermal impedance 20 24 @ VGS = 2.5V7.7 Fast switching speed 34 @ VGS = 1.8V6.5Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circui

Analog Power AM6920NHN-Channel 20-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)22 @ VGS = 4.5V6.8 Low thermal impedance 20 30 @ VGS = 2.5V5.8 Fast switching speed 46 @ VGS = 1.8V4.7Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circui

Analog Power AM6921PP-Channel 20-V (D-S) MOSFETPRODUCT SUMMARYThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low VDS (V) rDS(on) (OHM) ID (A)rDS(on) and to ensure minimal power loss and heat 0.050 @ VGS = -4.5V -4.0dissipation. Typical applications are DC-DC converters and power management in portable and -20 0.060 @ VGS = -2.5V -