AM7104N MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AM7104N

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 3.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 4.1 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 5 nS

Cossⓘ - Capacitancia de salida: 56 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.14 Ohm

Encapsulados: DFN3X3

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AM7104N datasheet

 ..1. Size:378K  analog power
 am7104n.pdf pdf_icon

AM7104N

Analog Power AM7104N N-Channel 100-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID (A) Low r trench technology DS(on) 140 @ VGS = 10V 4.1 Low thermal impedance 100 150 @ VGS = 4.5V 4.0 Fast switching speed Typical Applications DFN3x3-8L LED Inverter Circuits DC/DC Conversion Circuits Motor drives ABSOLUTE MAXIMUM RATINGS

 9.1. Size:344K  analog power
 am7102na.pdf pdf_icon

AM7104N

Analog Power AM7102NA N-Channel 100-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID (A) Low r trench technology DS(on) 26 @ VGS = 10V 9.5 Low thermal impedance 100 36 @ VGS = 4.5V 8.1 Fast switching speed Typical Applications DFN3x3-8L White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits AB

 9.2. Size:74K  analog power
 am7100n.pdf pdf_icon

AM7104N

Analog Power AM7100N N-Channel 100-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a PRODUCT SUMMARY high cell density trench process to provide low VDS (V) rDS(on) m( ) ID (A) rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 62 @ VGS = 10V 6.2 converters and power management in portable and 100 72 @ VGS = 4.5V 5.7 batte

 9.3. Size:87K  analog power
 am7101p.pdf pdf_icon

AM7104N

Analog Power AM7101P P-Channel 100-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a PRODUCT SUMMARY high cell density trench process to provide low VDS (V) rDS(on) m( ) ID (A) rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 269 @ VGS = -10V -3 converters and power management in portable and -100 289 @ VGS = -5.5V -2.9

MOSTRAR MÁS

Otros transistores... AM70N03-08D, AM70N04-06D, AM70N10-44P, AM70N15-40P, AM70P03-07D, AM7100N, AM7101P, AM7102NA, AON6380, AM7150N, AM7151P, AM7153P, AM7200N, AM7300N, AM7302N, AM7304N, AM7306NA