AM7320N MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AM7320N
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 3.5 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 8 V
|Id|ⓘ - Corriente continua de drenaje: 23 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 40 nS
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0047 Ohm
Encapsulados: DFN3X3
Búsqueda de reemplazo de AM7320N MOSFET
- Selecciónⓘ de transistores por parámetros
AM7320N datasheet
am7320n.pdf
Analog Power AM7320N N-Channel 20-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a PRODUCT SUMMARY high cell density trench process to provide low VDS (V) rDS(on) m( ) ID (A) rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 4.7 @ VGS = 4.5V 23 converters and power management in portable and 20 7 @ VGS = 2.5V 19 battery-
am7323p.pdf
Analog Power AM7323P P-Channel 20-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a PRODUCT SUMMARY high cell density trench process to provide low VDS (V) rDS(on) m( ) ID (A) rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 9 @ VGS = -4.5V -17 converters and power management in portable and -20 12 @ VGS = -2.5V -14 batt
am7321p.pdf
Analog Power AM7321P P-Channel 20-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a PRODUCT SUMMARY high cell density trench process to provide low VDS (V) rDS(on) m( ) ID (A) rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 14 @ VGS = -4.5V -13 converters and power management in portable and -20 19 @ VGS = -2.5V -12 bat
Otros transistores... AM7153P, AM7200N, AM7300N, AM7302N, AM7304N, AM7306NA, AM7308NA, AM7310N, IRFP250, AM7321P, AM7323P, AM7330N, AM7331P, AM7331PE, AM7332N, AM7333P, AM7333PE
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