IRFH7932PBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRFH7932PBF
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pd): 3.4 W
Tensión drenaje-fuente (Vds): 30 V
Tensión compuerta-fuente (Vgs): 20 V
Corriente continua de drenaje (Id): 24 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral compuerta-fuente Vgs(th): 2.35 V
Carga de compuerta (Qg): 34 nC
Tiempo de elevación (tr): 48 nS
Conductancia de drenaje-sustrato (Cd): 830 pF
Resistencia drenaje-fuente RDS(on): 0.0033 Ohm
Empaquetado / Estuche: PQFN
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IRFH7932PBF Datasheet (PDF)
1.1. irfh7932pbf.pdf 
Size:272K _upd-mosfet
PD - 96140A IRFH7932PbF Applications HEXFET® Power MOSFET l Synchronous MOSFET for Notebook VDSS RDS(on) max Qg Processor Power l Synchronous Rectifer MOSFET for Isolated 3.3m @VGS = 10V 30V 34nC DC-DC Converters in Networking Systems Benefits S l Very low RDS(ON) at 4.5V VGS S l Low Gate Charge D S l Fully Characterized Avalanche Voltage and D G Current D l 100% Tested
1.2. irfh7932pbf.pdf Size:335K _international_rectifier
IRFH7932PbF Applications HEXFET® Power MOSFET l Synchronous MOSFET for Notebook VDSS RDS(on) max Qg Processor Power l Synchronous Rectifer MOSFET for Isolated 3.3m @VGS = 10V 30V 34nC DC-DC Converters in Networking Systems Benefits S l Very low RDS(ON) at 4.5V VGS S l Low Gate Charge D S l Fully Characterized Avalanche Voltage and D G Current D l 100% Tested for RG D l
3.1. irfh7934pbf.pdf Size:310K _upd-mosfet
PD -97151 IRFH7934PbF Applications HEXFET® Power MOSFET l Control MOSFET of Sync-Buck Converters VDSS RDS(on) max Qg used for Notebook Processor Power l Control MOSFET for Isolated DC-DC 30V 3.5m @VGS = 10V 20nC Converters in Networking Systems Benefits S l Very low RDS(ON) at 4.5V VGS S l Low Gate Charge D S l Fully Characterized Avalanche Voltage and D G Current D l 100%
3.2. irfh7936pbf.pdf Size:266K _upd-mosfet
PD -97337A IRFH7936PbF Applications HEXFET® Power MOSFET l Synchronous MOSFET for Notebook VDSS RDS(on) max Qg Processor Power l Synchronous Rectifer MOSFET for Isolated 4.8m Ω@VGS = 10V 30V 17nC DC-DC Converters in Networking Systems Benefits S l Very low RDS(ON) at 4.5V VGS S l Low Gate Charge D S l Fully Characterized Avalanche Voltage and D G Current D l 100% Teste
3.3. irfh7934pbf.pdf Size:274K _international_rectifier
IRFH7934PbF HEXFET® Power MOSFET Applications VDSS RDS(on) max Qg l Control MOSFET of Sync-Buck Converters used for Notebook Processor Power 30V 3.5m @VGS = 10V 20nC l Control MOSFET for Isolated DC-DC Converters in Networking Systems Benefits l Very low RDS(ON) at 4.5V VGS l Low Gate Charge l Fully Characterized Avalanche Voltage and Current l 100% Tested for RG PQFN 5X6 mm l L
3.4. irfh7936pbf.pdf Size:302K _international_rectifier
IRFH7936PbF Applications HEXFET® Power MOSFET l Synchronous MOSFET for Notebook VDSS RDS(on) max Qg Processor Power l Synchronous Rectifer MOSFET for Isolated 4.8m 30V Ω@VGS = 10V 17nC DC-DC Converters in Networking Systems Benefits l Very low RDS(ON) at 4.5V VGS l Low Gate Charge l Fully Characterized Avalanche Voltage and Current l 100% Tested for RG l Lead-Free (Qualified
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