IRFH7932PBF Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRFH7932PBF 📄📄
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 3.4 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 24 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 48 nS
Cossⓘ - Capacitancia de salida: 830 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0033 Ohm
Encapsulados: PQFN
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IRFH7932PBF datasheet
irfh7932pbf.pdf
IRFH7932PbF Applications HEXFET Power MOSFET l Synchronous MOSFET for Notebook VDSS RDS(on) max Qg Processor Power l Synchronous Rectifer MOSFET for Isolated 3.3m @VGS = 10V 30V 34nC DC-DC Converters in Networking Systems Benefits S l Very low RDS(ON) at 4.5V VGS S l Low Gate Charge D S l Fully Characterized Avalanche Voltage and D G Current D l 100% Tested for RG D l
irfh7934trpbf.pdf
IRFH7934PbF HEXFET Power MOSFET Applications VDSS RDS(on) max Qg l Control MOSFET of Sync-Buck Converters used for Notebook Processor Power 30V 3.5m @VGS = 10V 20nC l Control MOSFET for Isolated DC-DC Converters in Networking Systems Benefits l Very low RDS(ON) at 4.5V VGS l Low Gate Charge l Fully Characterized Avalanche Voltage and Current l 100% Tested for RG PQFN 5X6 mm l L
irfh7936pbf.pdf
PD -97337A IRFH7936PbF Applications HEXFET Power MOSFET l Synchronous MOSFET for Notebook VDSS RDS(on) max Qg Processor Power l Synchronous Rectifer MOSFET for Isolated 4.8m @VGS = 10V 30V 17nC DC-DC Converters in Networking Systems Benefits S l Very low RDS(ON) at 4.5V VGS S l Low Gate Charge D S l Fully Characterized Avalanche Voltage and D G Current D l 100% Teste
irfh7934pbf.pdf
IRFH7934PbF HEXFET Power MOSFET Applications VDSS RDS(on) max Qg l Control MOSFET of Sync-Buck Converters used for Notebook Processor Power 30V 3.5m @VGS = 10V 20nC l Control MOSFET for Isolated DC-DC Converters in Networking Systems Benefits l Very low RDS(ON) at 4.5V VGS l Low Gate Charge l Fully Characterized Avalanche Voltage and Current l 100% Tested for RG PQFN 5X6 mm l L
Otros transistores... AM7333PE, AM7334N, AM7335P, AM7336N, AM7338N, IRFH7911PBF, IRFH7914PBF, IRFH7921PBF, MMIS60R580P, IRFH7934PBF, IRFH7936PBF, IRFH8201, IRFH8202, IRFH8303, IRFH8307, IRFH8311, IRFH8316
Parámetros del MOSFET. Cómo se afectan entre sí.
History: CES2316 | APG054N10D
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