IRFH7932PBF Todos los transistores

 

IRFH7932PBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRFH7932PBF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 3.4 W

Tensión drenaje-fuente (Vds): 30 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 24 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 2.35 V

Carga de compuerta (Qg): 34 nC

Tiempo de elevación (tr): 48 nS

Conductancia de drenaje-sustrato (Cd): 830 pF

Resistencia drenaje-fuente RDS(on): 0.0033 Ohm

Empaquetado / Estuche: PQFN

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IRFH7932PBF Datasheet (PDF)

1.1. irfh7932pbf.pdf Size:272K _upd-mosfet

IRFH7932PBF
IRFH7932PBF

PD - 96140A IRFH7932PbF Applications HEXFET® Power MOSFET l Synchronous MOSFET for Notebook VDSS RDS(on) max Qg Processor Power l Synchronous Rectifer MOSFET for Isolated 3.3m @VGS = 10V 30V 34nC DC-DC Converters in Networking Systems Benefits S l Very low RDS(ON) at 4.5V VGS S l Low Gate Charge D S l Fully Characterized Avalanche Voltage and D G Current D l 100% Tested

1.2. irfh7932pbf.pdf Size:335K _international_rectifier

IRFH7932PBF
IRFH7932PBF

IRFH7932PbF Applications HEXFET® Power MOSFET l Synchronous MOSFET for Notebook VDSS RDS(on) max Qg Processor Power l Synchronous Rectifer MOSFET for Isolated 3.3m @VGS = 10V 30V 34nC DC-DC Converters in Networking Systems Benefits S l Very low RDS(ON) at 4.5V VGS S l Low Gate Charge D S l Fully Characterized Avalanche Voltage and D G Current D l 100% Tested for RG D l

 3.1. irfh7936pbf.pdf Size:266K _upd-mosfet

IRFH7932PBF
IRFH7932PBF

PD -97337A IRFH7936PbF Applications HEXFET® Power MOSFET l Synchronous MOSFET for Notebook VDSS RDS(on) max Qg Processor Power l Synchronous Rectifer MOSFET for Isolated 4.8m Ω@VGS = 10V 30V 17nC DC-DC Converters in Networking Systems Benefits S l Very low RDS(ON) at 4.5V VGS S l Low Gate Charge D S l Fully Characterized Avalanche Voltage and D G Current D l 100% Teste

3.2. irfh7934pbf.pdf Size:310K _upd-mosfet

IRFH7932PBF
IRFH7932PBF

PD -97151 IRFH7934PbF Applications HEXFET® Power MOSFET l Control MOSFET of Sync-Buck Converters VDSS RDS(on) max Qg used for Notebook Processor Power l Control MOSFET for Isolated DC-DC 30V 3.5m @VGS = 10V 20nC Converters in Networking Systems Benefits S l Very low RDS(ON) at 4.5V VGS S l Low Gate Charge D S l Fully Characterized Avalanche Voltage and D G Current D l 100%

 3.3. irfh7936pbf.pdf Size:302K _international_rectifier

IRFH7932PBF
IRFH7932PBF

IRFH7936PbF Applications HEXFET® Power MOSFET l Synchronous MOSFET for Notebook VDSS RDS(on) max Qg Processor Power l Synchronous Rectifer MOSFET for Isolated 4.8m 30V Ω@VGS = 10V 17nC DC-DC Converters in Networking Systems Benefits l Very low RDS(ON) at 4.5V VGS l Low Gate Charge l Fully Characterized Avalanche Voltage and Current l 100% Tested for RG l Lead-Free (Qualified

3.4. irfh7934pbf.pdf Size:274K _international_rectifier

IRFH7932PBF
IRFH7932PBF

IRFH7934PbF HEXFET® Power MOSFET Applications VDSS RDS(on) max Qg l Control MOSFET of Sync-Buck Converters used for Notebook Processor Power 30V 3.5m @VGS = 10V 20nC l Control MOSFET for Isolated DC-DC Converters in Networking Systems Benefits l Very low RDS(ON) at 4.5V VGS l Low Gate Charge l Fully Characterized Avalanche Voltage and Current l 100% Tested for RG PQFN 5X6 mm l L

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