IRFH7936PBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRFH7936PBF
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 3.1 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 20 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 12 nS
Cossⓘ - Capacitancia de salida: 450 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0048 Ohm
Paquete / Cubierta: PQFN
- Selección de transistores por parámetros
IRFH7936PBF Datasheet (PDF)
irfh7936pbf.pdf

PD -97337AIRFH7936PbFApplications HEXFET Power MOSFETl Synchronous MOSFET for NotebookVDSS RDS(on) maxQgProcessor Powerl Synchronous Rectifer MOSFET for Isolated4.8m@VGS = 10V30V 17nCDC-DC Converters in Networking SystemsBenefitsSl Very low RDS(ON) at 4.5V VGSSl Low Gate Charge DSl Fully Characterized Avalanche Voltage andDGCurrentDl 100% Teste
irfh7934trpbf.pdf

IRFH7934PbFHEXFET Power MOSFETApplicationsVDSS RDS(on) max Qgl Control MOSFET of Sync-Buck Convertersused for Notebook Processor Power 30V 3.5m @VGS = 10V 20nCl Control MOSFET for Isolated DC-DCConverters in Networking SystemsBenefitsl Very low RDS(ON) at 4.5V VGSl Low Gate Chargel Fully Characterized Avalanche Voltage andCurrentl 100% Tested for RGPQFN 5X6 mml L
irfh7932pbf.pdf

IRFH7932PbFApplicationsHEXFET Power MOSFETl Synchronous MOSFET for NotebookVDSS RDS(on) maxQgProcessor Powerl Synchronous Rectifer MOSFET for Isolated3.3m @VGS = 10V30V 34nCDC-DC Converters in Networking SystemsBenefitsSl Very low RDS(ON) at 4.5V VGSSl Low Gate Charge DSl Fully Characterized Avalanche Voltage andDGCurrentDl 100% Tested for RGDl
irfh7934pbf.pdf

IRFH7934PbFHEXFET Power MOSFETApplicationsVDSS RDS(on) max Qgl Control MOSFET of Sync-Buck Convertersused for Notebook Processor Power 30V 3.5m @VGS = 10V 20nCl Control MOSFET for Isolated DC-DCConverters in Networking SystemsBenefitsl Very low RDS(ON) at 4.5V VGSl Low Gate Chargel Fully Characterized Avalanche Voltage andCurrentl 100% Tested for RGPQFN 5X6 mml L
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: CS15N70F | IRFZ24L | NTD3055-094-1G | 2SK1601
History: CS15N70F | IRFZ24L | NTD3055-094-1G | 2SK1601



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