IRFH8303 Todos los transistores

 

IRFH8303 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRFH8303

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 3.7 W

Tensión drenaje-fuente (Vds): 30 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 43 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 2.2 V

Carga de compuerta (Qg): 58 nC

Tiempo de elevación (tr): 91 nS

Conductancia de drenaje-sustrato (Cd): 1363 pF

Resistencia drenaje-fuente RDS(on): 0.0011 Ohm

Empaquetado / Estuche: PQFN5X6

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IRFH8303 Datasheet (PDF)

1.1. irfh8303.pdf Size:528K _upd-mosfet

IRFH8303
IRFH8303

StrongIRFET™ IRFH8303PbF HEXFET® Power MOSFET VDSS 30 V RDS(on) max 1.10 m Qg (typical) 58 nC RG (typical) 1.0 Ω ID 100 A (@TC (Bottom) = 25°C) PQFN 5 x 6 mm Applications Control MOSFET for synchronous buck converter Features Benefits Low RDS(ON) (≤ 1.10 m) Lower Conduction Losses Low Thermal Resistance to PCB (<0.8°C/W) Enable better

3.1. irfh8307.pdf Size:360K _upd-mosfet

IRFH8303
IRFH8303

 StrongIRFET™ IRFH8307PbF HEXFET® Power MOSFET VDSS 30 V RDS(on) max 1.3 m (@ VGS = 10V) Qg (typical) 50 nC Rg (typical) 1.3  ID 100 A (@TC (Bottom) = 25°C) PQFN 5X6 mm Applications OR-ing MOSFET for 12V (typical) Bus in-Rush Current Battery Operated DC Motor Inverters Features Benefits Low RDSon (<1.3m) Lower Conduction Losse

 4.1. irfh8337pbf.pdf Size:226K _upd-mosfet

IRFH8303
IRFH8303

PD - 97646C IRFH8337PbF HEXFET® Power MOSFET VDS 30 V VGS max V ± 20 RDS(on) max 12.8 (@VGS = 10V) mΩ (@VGS = 4.5V) 19.9 Qg typ. 4.7 nC PQFN 5X6 mm ID 16.2 A (@Tc(Bottom) = 25°C) Applications • Control MOSFET for high frequency buck converters Features and Benefits Features Benefits Low Thermal Resistance to PCB (< 4.7°C/W) Enable better thermal dissipation

4.2. irfh8316.pdf Size:248K _upd-mosfet

IRFH8303
IRFH8303

IRFH8316PbF HEXFET® Power MOSFET VDS 30 V Vgs max ± 20 V RDS(on) max 2.95 (@VGS = 10V) mΩ (@VGS = 4.5V) 4.30 Qg typ 30.0 nC PQFN 5X6 mm ID 50 A (@Tc(Bottom) = 25°C) Applications • Synchronous MOSFET for high frequency buck converters Features and Benefits Features Benefits Low Thermal Resistance to PCB (< 1.7°C/W) Enable better thermal dissipation Low Profile

 4.3. irfh8311.pdf Size:310K _upd-mosfet

IRFH8303
IRFH8303

IRFH8311PbF HEXFET® Power MOSFET VDS 30 V Vgs max V ± 20 RDS(on) max 2.1 (@VGS = 10V) mΩ (@VGS = 4.5V) 3.2 Qg typ. 30 nC PQFN 5X6 mm ID 80 A (@Tc(Bottom) = 25°C) Applications • Synchronous MOSFET for high frequency buck converters Features and Benefits Features Benefits Low Thermal Resistance to PCB (< 1.3°C/W) Enable better thermal dissipation Low Profile (<1.2mm)

4.4. irfh8325pbf.pdf Size:224K _upd-mosfet

IRFH8303
IRFH8303

PD - 96359C IRFH8325PbF HEXFET® Power MOSFET VDS 30 V Vgs max V ± 20 RDS(on) max 5.0 (@VGS = 10V) mΩ (@VGS = 4.5V) 7.2 Qg typ 15 nC PQFN 5X6 mm ID 25 A (@Tc(Bottom) = 25°C) Applications • Synchronous MOSFET for high frequency buck converters Features and Benefits Features Benefits Low Thermal Resistance to PCB (< 2.3°C/W) Enable better thermal dissipation Lo

 4.5. irfh8321.pdf Size:232K _upd-mosfet

IRFH8303
IRFH8303

IRFH8321PbF VDS 30 V HEXFET® Power MOSFET Vgs max V ± 20 RDS(on) max 4.9 (@VGS = 10V) m (@VGS = 4.5V) 6.8 Qg typ. 19.4 nC ID 25 A PQFN 5X6 mm (@Tc(Bottom) = 25°C) Applications Synchronous MOSFET for high frequency buck converters Features Benefits Low Thermal Resistance to PCB (< 2.3°C/W) Enable better thermal dissipation Low Profile (<1.2mm) results in Inc

4.6. irfh8330pbf.pdf Size:227K _upd-mosfet

IRFH8303
IRFH8303

PD - 97652C IRFH8330PbF HEXFET® Power MOSFET VDS 30 V VGS max V ± 20 RDS(on) max 6.6 (@VGS = 10V) mΩ (@VGS = 4.5V) 9.9 Qg typ. 9.3 nC PQFN 5X6 mm ID 25 A (@Tc(Bottom) = 25°C) Applications • Control MOSFET for high frequency buck converters • Synchronous MOSFET for high frequency buck converters Features and Benefits Features Benefits Low Thermal Resistance

4.7. irfh8318pbf.pdf Size:247K _upd-mosfet

IRFH8303
IRFH8303

PD - 97649C IRFH8318PbF HEXFET® Power MOSFET VDS 30 V Vgs max ± 20 V RDS(on) max 3.1 (@VGS = 10V) mΩ (@VGS = 4.5V) 4.6 Qg typ 19 nC PQFN 5X6 mm ID 50 A (@Tc(Bottom) = 25°C) Applications • Synchronous MOSFET for high frequency buck converters Features and Benefits Features Benefits Low Thermal Resistance to PCB (< 1.7°C/W) Enable better thermal dissipation Low

4.8. irfh8334pbf-1.pdf Size:236K _upd-mosfet

IRFH8303
IRFH8303

IRFH8334PbF-1 HEXFET® Power MOSFET VDS 30 V VGS max V ± 20 RDS(on) max 9.0 (@VGS = 10V) mΩ (@VGS = 4.5V) 13.5 Qg typ. 7.1 nC PQFN 5X6 mm ID 25 A (@Tc(Bottom) = 25°C) Applications • Control MOSFET for high frequency buck converters Features Benefits Industry-standard pinout PQFN 5 x 6mm Package Multi-Vendor Compatibility ⇒ Compatible with Existing Surface Mou

4.9. irfh8337pbf.pdf Size:298K _international_rectifier

IRFH8303
IRFH8303

IRFH8337PbF HEXFET® Power MOSFET VDS 30 V VGS max V ± 20 RDS(on) max 12.8 (@VGS = 10V) mΩ (@VGS = 4.5V) 19.9 Qg typ. 4.7 nC PQFN 5X6 mm ID 16.2 A (@Tc(Bottom) = 25°C) Applications • Control MOSFET for high frequency buck converters Features and Benefits Features Benefits Low Thermal Resistance to PCB (< 4.7°C/W) Enable better thermal dissipation Low Profile

4.10. irfh8334pbf.pdf Size:298K _international_rectifier

IRFH8303
IRFH8303

IRFH8334PbF HEXFET® Power MOSFET VDS 30 V VGS max V ± 20 RDS(on) max 9.0 (@VGS = 10V) mΩ (@VGS = 4.5V) 13.5 Qg typ. 7.1 nC PQFN 5X6 mm ID 25 A (@Tc(Bottom) = 25°C) Applications • Control MOSFET for high frequency buck converters Features and Benefits Features Benefits Low Thermal Resistance to PCB (< 4.1°C/W) Enable better thermal dissipation Low Profile (<1

4.11. irfh8325pbf.pdf Size:257K _international_rectifier

IRFH8303
IRFH8303

IRFH8325PbF HEXFET® Power MOSFET VDS 30 V Vgs max V ± 20 RDS(on) max 5.0 (@VGS = 10V) mΩ (@VGS = 4.5V) 7.2 Qg typ 15 nC PQFN 5X6 mm ID 25 A (@Tc(Bottom) = 25°C) Applications • Synchronous MOSFET for high frequency buck converters Features and Benefits Features Benefits Low Thermal Resistance to PCB (< 2.3°C/W) Enable better thermal dissipation Low Profile (<1

4.12. irfh8330pbf.pdf Size:332K _international_rectifier

IRFH8303
IRFH8303

IRFH8330PbF HEXFET® Power MOSFET VDS 30 V VGS max V ± 20 RDS(on) max 6.6 (@VGS = 10V) mΩ (@VGS = 4.5V) 9.9 Qg typ. 9.3 nC PQFN 5X6 mm ID 25 A (@Tc(Bottom) = 25°C) Applications • Control MOSFET for high frequency buck converters • Synchronous MOSFET for high frequency buck converters Features and Benefits Features Benefits Low Thermal Resistance to PCB (< 3.

4.13. irfh8318pbf.pdf Size:257K _international_rectifier

IRFH8303
IRFH8303

IRFH8318PbF HEXFET® Power MOSFET VDS 30 V Vgs max ± 20 V RDS(on) max 3.1 (@VGS = 10V) mΩ (@VGS = 4.5V) 4.6 Qg typ 19 nC PQFN 5X6 mm ID 50 A (@Tc(Bottom) = 25°C) Applications • Synchronous MOSFET for high frequency buck converters Features and Benefits Features Benefits Low Thermal Resistance to PCB (< 1.7°C/W) Enable better thermal dissipation Low Profile (<1.

4.14. irfh8324pbf.pdf Size:289K _international_rectifier

IRFH8303
IRFH8303

IRFH8324PbF HEXFET® Power MOSFET VDS 30 V Vgs max V ± 20 RDS(on) max 4.1 (@VGS = 10V) mΩ (@VGS = 4.5V) 6.3 Qg typ. 14 nC PQFN 5X6 mm ID 50 A (@Tc(Bottom) = 25°C) Applications • Synchronous MOSFET for high frequency buck converters Features and Benefits Features Benefits Low Thermal Resistance to PCB (< 2.3°C/W) Enable better thermal dissipation Low Profile (

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