IRFH8311 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRFH8311
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 3.6 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 32 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.35 VQgⓘ - Carga de la puerta: 30 nC
trⓘ - Tiempo de subida: 26 nS
Cossⓘ - Capacitancia de salida: 1065 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0021 Ohm
Paquete / Cubierta: PQFN5X6
Búsqueda de reemplazo de MOSFET IRFH8311
IRFH8311 Datasheet (PDF)
irfh8311.pdf
IRFH8311PbFHEXFET Power MOSFETVDS 30 VVgs max V 20RDS(on) max 2.1(@VGS = 10V) m(@VGS = 4.5V) 3.2Qg typ. 30 nCPQFN 5X6 mmID 80 A(@Tc(Bottom) = 25C)Applications Synchronous MOSFET for high frequency buck convertersFeatures and BenefitsFeatures BenefitsLow Thermal Resistance to PCB (
irfh8311pbf.pdf
IRFH8311PbFHEXFET Power MOSFETVDS 30 VVgs max V 20RDS(on) max 2.1(@VGS = 10V) m(@VGS = 4.5V) 3.2Qg typ. 30 nCPQFN 5X6 mmID 80 A(@Tc(Bottom) = 25C)Applications Synchronous MOSFET for high frequency buck convertersFeatures and BenefitsFeatures BenefitsLow Thermal Resistance to PCB (
irfh8311trpbf.pdf
IRFH8311PbFHEXFET Power MOSFETVDS 30 VVgs max V 20RDS(on) max 2.1(@VGS = 10V) m(@VGS = 4.5V) 3.2Qg typ. 30 nCPQFN 5X6 mmID 80 A(@Tc(Bottom) = 25C)Applications Synchronous MOSFET for high frequency buck convertersFeatures and BenefitsFeatures BenefitsLow Thermal Resistance to PCB (
irfh8318trpbf.pdf
IRFH8318PbFHEXFET Power MOSFETVDS 30 VVgs max 20 VRDS(on) max 3.1(@VGS = 10V)m(@VGS = 4.5V)4.6Qg typ19 nCPQFN 5X6 mmID 50 A(@Tc(Bottom) = 25C)Applications Synchronous MOSFET for high frequency buck convertersFeatures and BenefitsFeatures BenefitsLow Thermal Resistance to PCB (
irfh8316.pdf
IRFH8316PbFHEXFET Power MOSFETVDS 30 VVgs max 20 VRDS(on) max 2.95(@VGS = 10V)m(@VGS = 4.5V)4.30Qg typ30.0 nCPQFN 5X6 mmID 50 A(@Tc(Bottom) = 25C)Applications Synchronous MOSFET for high frequency buck convertersFeatures and BenefitsFeatures BenefitsLow Thermal Resistance to PCB (
irfh8318pbf.pdf
PD - 97649CIRFH8318PbFHEXFET Power MOSFETVDS 30 VVgs max 20 VRDS(on) max 3.1(@VGS = 10V)m(@VGS = 4.5V)4.6Qg typ19 nCPQFN 5X6 mmID 50 A(@Tc(Bottom) = 25C)Applications Synchronous MOSFET for high frequency buck convertersFeatures and BenefitsFeatures BenefitsLow Thermal Resistance to PCB (
irfh8318pbf.pdf
IRFH8318PbFHEXFET Power MOSFETVDS 30 VVgs max 20 VRDS(on) max 3.1(@VGS = 10V)m(@VGS = 4.5V)4.6Qg typ19 nCPQFN 5X6 mmID 50 A(@Tc(Bottom) = 25C)Applications Synchronous MOSFET for high frequency buck convertersFeatures and BenefitsFeatures BenefitsLow Thermal Resistance to PCB (
Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918