IRFH8337PBF Todos los transistores

 

IRFH8337PBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRFH8337PBF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 3.2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 12 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.35 V
   Qgⓘ - Carga de la puerta: 4.7 nC
   trⓘ - Tiempo de subida: 12 nS
   Cossⓘ - Capacitancia de salida: 180 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0128 Ohm
   Paquete / Cubierta: PQFN5X6

 Búsqueda de reemplazo de MOSFET IRFH8337PBF

 

IRFH8337PBF Datasheet (PDF)

 ..1. Size:226K  international rectifier
irfh8337pbf.pdf

IRFH8337PBF
IRFH8337PBF

PD - 97646CIRFH8337PbFHEXFET Power MOSFETVDS 30 VVGS max V 20RDS(on) max 12.8(@VGS = 10V)m(@VGS = 4.5V)19.9Qg typ.4.7 nCPQFN 5X6 mmID 16.2 A(@Tc(Bottom) = 25C)Applications Control MOSFET for high frequency buck convertersFeatures and BenefitsFeatures BenefitsLow Thermal Resistance to PCB (

 7.1. Size:236K  international rectifier
irfh8334pbf-1.pdf

IRFH8337PBF
IRFH8337PBF

IRFH8334PbF-1HEXFET Power MOSFETVDS 30 VVGS max V 20RDS(on) max 9.0(@VGS = 10V)m(@VGS = 4.5V)13.5Qg typ.7.1 nCPQFN 5X6 mmID 25 A(@Tc(Bottom) = 25C)Applications Control MOSFET for high frequency buck convertersFeatures BenefitsIndustry-standard pinout PQFN 5 x 6mm Package Multi-Vendor CompatibilityCompatible with Existing Surface Mou

 7.2. Size:298K  international rectifier
irfh8334pbf.pdf

IRFH8337PBF
IRFH8337PBF

IRFH8334PbFHEXFET Power MOSFETVDS 30 VVGS max V 20RDS(on) max 9.0(@VGS = 10V)m(@VGS = 4.5V)13.5Qg typ.7.1 nCPQFN 5X6 mmID 25 A(@Tc(Bottom) = 25C)Applications Control MOSFET for high frequency buck convertersFeatures and BenefitsFeatures BenefitsLow Thermal Resistance to PCB (

 7.3. Size:227K  international rectifier
irfh8330pbf.pdf

IRFH8337PBF
IRFH8337PBF

PD - 97652CIRFH8330PbFHEXFET Power MOSFETVDS 30 VVGS max V 20RDS(on) max 6.6(@VGS = 10V)m(@VGS = 4.5V)9.9Qg typ.9.3 nCPQFN 5X6 mmID 25 A(@Tc(Bottom) = 25C)Applications Control MOSFET for high frequency buck converters Synchronous MOSFET for high frequency buck convertersFeatures and BenefitsFeatures BenefitsLow Thermal Resistance

 7.4. Size:312K  infineon
irfh8330pbf.pdf

IRFH8337PBF
IRFH8337PBF

IRFH8330PbFHEXFET Power MOSFETVDS 30 VVGS max V 20RDS(on) max 6.6(@VGS = 10V)m(@VGS = 4.5V)9.9Qg typ.9.3 nCPQFN 5X6 mmID 25 A(@Tc(Bottom) = 25C)Applications Control MOSFET for high frequency buck converters Synchronous MOSFET for high frequency buck convertersFeatures and BenefitsFeatures BenefitsLow Thermal Resistance to PCB (

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