2SJ463 Todos los transistores

 

2SJ463 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SJ463
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.15 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 16 V
   |Id|ⓘ - Corriente continua de drenaje: 0.1 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 184 nS
   Cossⓘ - Capacitancia de salida: 16 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 13 Ohm
   Paquete / Cubierta: SC70
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2SJ463 Datasheet (PDF)

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2SJ463

 0.1. Size:246K  renesas
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2SJ463

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

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2SJ463

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SJ463AP-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHINGPACKAGE DRAWING (Unit: mm) DESCRIPTION The 2SJ463A is a switching device which can be driven directly 2.1 0.1by a 2.5 V power source. 1.25 0.1 The 2SJ463A has excellent switching characteristics, and is suitable for use as a high-speed switching device in digita

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2SJ463

Otros transistores... 2SJ425 , 2SJ44 , 2SJ448 , 2SJ449 , 2SJ45 , 2SJ460 , 2SJ461 , 2SJ462 , IRFB31N20D , 2SJ471 , 2SJ479 , 2SJ483 , 2SJ484 , 2SJ486 , 2SJ496 , 2SJ504 , 2SJ505 .

History: GSM2306A | IPD12CN10NG | NVMFS020N06C | WSD2012DN25 | NCEAP40T17AD | IRF7103PBF | STK28N3LLH5

 

 
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