IRFHM830PBF Todos los transistores

 

IRFHM830PBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRFHM830PBF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 2.7 W

Tensión drenaje-fuente (Vds): 30 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 21 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 2.35 V

Carga de compuerta (Qg): 15 nC

Tiempo de elevación (tr): 25 nS

Conductancia de drenaje-sustrato (Cd): 350 pF

Resistencia drenaje-fuente RDS(on): 0.0038 Ohm

Empaquetado / Estuche: PQFN3.3X3.3

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IRFHM830PBF Datasheet (PDF)

1.1. irfhm830pbf.pdf Size:229K _upd-mosfet

IRFHM830PBF
IRFHM830PBF

PD - 97547A IRFHM830PbF HEXFET® Power MOSFET VDS 30 V RDS(on) max 3.8 mΩ D 5 4 G (@VGS = 10V) D 6 3 S Qg (typical) 15 nC D 7 2 S RG (typical) 2.5 Ω D 8 1 S 3.3mm x 3.3mm PQFN ID 40 A (@Tc(Bottom) = 25°C) Applications • Battery Operated DC Motor Inverter MOSFET Features and Benefits Features Benefits Low RDSon (<3.8mΩ) Lower Conduction Losses Low Thermal Resi

1.2. irfhm830pbf.pdf Size:262K _international_rectifier

IRFHM830PBF
IRFHM830PBF

IRFHM830PbF HEXFET® Power MOSFET VDS 30 V RDS(on) max 3.8 mΩ (@VGS = 10V) Qg (typical) 15 nC RG (typical) 2.5 Ω 3.3mm x 3.3mm PQFN ID 40 A (@Tc(Bottom) = 25°C) Applications • Battery Operated DC Motor Inverter MOSFET Features and Benefits Features Benefits Low RDSon (<3.8mΩ) Lower Conduction Losses Low Thermal Resistance to PCB (<3.4°C/W) Enable better thermal di

 2.1. irfhm830dpbf.pdf Size:243K _upd-mosfet

IRFHM830PBF
IRFHM830PBF

PD -96327A IRFHM830DPbF HEXFET® Power MOSFET VDS 30 V RDS(on) max D 5 4 G 4.3 mΩ (@VGS = 10V) D 6 3 S Qg (typical) 13 nC D 7 2 S RG (typical) 1.1 D 8 1 S Ω ID 40 A 3.3mm x 3.3mm PQFN (@Tc(Bottom) = 25°C) Applications • Synchronous MOSFET for Buck Converters Features and Benefits Features Benefits Low RDSon (≤ 4.3mΩ) Lower Conduction Losses Schottky intrin

2.2. irfhm830d.pdf Size:243K _international_rectifier

IRFHM830PBF
IRFHM830PBF

PD -96327A IRFHM830DPbF HEXFET® Power MOSFET VDS 30 V RDS(on) max D 5 4 G 4.3 mΩ (@VGS = 10V) D 6 3 S Qg (typical) 13 nC D 7 2 S RG (typical) 1.1 D 8 1 S Ω ID 40 A 3.3mm x 3.3mm PQFN (@Tc(Bottom) = 25°C) Applications • Synchronous MOSFET for Buck Converters Features and Benefits Features Benefits Low RDSon (≤ 4.3mΩ) Lower Conduction Losses Schottky intrin

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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