IRFHM8326 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRFHM8326
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pd): 2.8 W
Tensión drenaje-fuente (Vds): 30 V
Tensión compuerta-fuente (Vgs): 20 V
Corriente continua de drenaje (Id): 19 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral compuerta-fuente Vgs(th): 2.2 V
Carga de compuerta (Qg): 20 nC
Tiempo de elevación (tr): 35 nS
Conductancia de drenaje-sustrato (Cd): 524 pF
Resistencia drenaje-fuente RDS(on): 0.0047 Ohm
Empaquetado / Estuche: PQFN3.3X3.3
Búsqueda de reemplazo de MOSFET IRFHM8326
IRFHM8326 Datasheet (PDF)
1.1. irfhm8326.pdf 
Size:655K _upd-mosfet
IRFHM8326PbF HEXFET® Power MOSFET VDSS 30 V VGS max ±20 V RDS(on) max 4.7 G (@ VGS = 10V) m S S S (@ VGS = 4.5V) 6.7 D Qg (typical) 20 nC D D D ID D 70 A (@TC (Bottom) = 25°C) PQFN 3.3X3.3 mm Applications Charge and Discharge Switch for Notebook PC Battery Application System/Load Switch Synchronous MOSFET for
2.1. irfhm8329.pdf Size:639K _upd-mosfet
IRFHM8329PbF HEXFET® Power MOSFET VDSS 30 V VGS max ±20 V RDS(on) max 6.1 G (@ VGS = 10V) m S S S (@ VGS = 4.5V) 8.8 D Qg (typical) 13 nC D D D ID D 24 A (@TC (Bottom) = 25°C) PQFN 3.3X3.3 mm Applications Charge and Discharge Switch for Notebook PC Battery Application System/Load Switch Synchronous MOSFET for
3.1. irfhm8334.pdf Size:246K _upd-mosfet
IRFHM8334TRPbF VDS 30 V HEXFET® Power MOSFET VGS max V ± 20 RDS(on) max 9.0 (@VGS = 10V) m (@VGS = 4.5V) 13.5 Qg typ. 7.1 nC ID PQFN 3.3 X 3.3 mm 25 A (@Tc(Bottom) = 25°C) Applications • Control MOSFET for high frequency buck converters Features Benefits Low Thermal Resistance to PCB (< 4.5°C/W) Enable better thermal dissipation Low Profile (<1.2mm) Increased Power Densi
3.2. irfhm830pbf.pdf Size:229K _upd-mosfet
PD - 97547A IRFHM830PbF HEXFET® Power MOSFET VDS 30 V RDS(on) max 3.8 mΩ D 5 4 G (@VGS = 10V) D 6 3 S Qg (typical) 15 nC D 7 2 S RG (typical) 2.5 Ω D 8 1 S 3.3mm x 3.3mm PQFN ID 40 A (@Tc(Bottom) = 25°C) Applications • Battery Operated DC Motor Inverter MOSFET Features and Benefits Features Benefits Low RDSon (<3.8mΩ) Lower Conduction Losses Low Thermal Resi
3.3. irfhm8342.pdf Size:629K _upd-mosfet
IRFHM8342TRPbF HEXFET® Power MOSFET VDSS 30 V RDS(on) max 16 (@ VGS = 10V) m (@ VGS = 4.5V) 25 Qg (typical) 5.0 nC ID 20 A (@TC (Bottom) = 25°C) PQFN 3.3 x 3.3 mm Applications Control MOSFET for synchronous buck converter Load Switch Features Benefits Low Charge (typical 5.2 nC) Low Switching Losses Low Thermal Resistance to PCB (<6.
3.4. irfhm8330.pdf Size:669K _upd-mosfet
IRFHM8330PbF HEXFET® Power MOSFET VDSS 30 V VGS max ±20 V RDS(on) max 6.6 G (@ VGS = 10V) m S S S (@ VGS = 4.5V) 9.9 D Qg (typical) 9.3 nC D D D ID D 25 A (@TC (Bottom) = 25°C) PQFN 3.3X3.3 mm Applications Charge and Discharge Switch for Notebook PC Battery Application System/Load Switch Control MOSFET for sy
3.5. irfhm830dpbf.pdf Size:243K _upd-mosfet
PD -96327A IRFHM830DPbF HEXFET® Power MOSFET VDS 30 V RDS(on) max D 5 4 G 4.3 mΩ (@VGS = 10V) D 6 3 S Qg (typical) 13 nC D 7 2 S RG (typical) 1.1 D 8 1 S Ω ID 40 A 3.3mm x 3.3mm PQFN (@Tc(Bottom) = 25°C) Applications • Synchronous MOSFET for Buck Converters Features and Benefits Features Benefits Low RDSon (≤ 4.3mΩ) Lower Conduction Losses Schottky intrin
3.6. irfhm8337.pdf Size:651K _upd-mosfet
IRFHM8337TRPbF HEXFET® Power MOSFET VDSS 30 V RDS(on) max 12.4 (@ VGS = 10V) m (@ VGS = 4.5V) 17.9 Qg (typical) 5.4 nC ID PQFN 3.3 x 3.3 mm 18 A (@TC = 25°C) Applications System/load switch, Charge or discharge switch for battery protection Features Benefits Low Thermal Resistance to PCB (< 5.0°C/W) Enable better Thermal Dissipation
3.7. irfhm8363pbf.pdf Size:298K _upd-mosfet
IRFHM8363PbF HEXFET® Power MOSFET VDS 30 V Vgs max V ± 20 RDS(on) max G 14.9 S G (@VGS = 10V) mΩ S D D (@VGS = 4.5V) 20.4 D D D D Qg typ 6.7 nC PQFN Dual 3.3X3.3 mm ID 10 A (@Tc(Bottom) = 25°C) Applications • Power Stage for high frequency buck converters • Battery Protection charge and discharge switches Features and Benefits Features Benefits Low
3.8. irfhm831pbf.pdf Size:256K _upd-mosfet
PD -97539A IRFHM831PbF HEXFET® Power MOSFET VDS 30 V D 5 4 G RDS(on) max 7.8 m (@VGS = 10V) D 6 3 S D 7 2 S Qg (typical) 7.3 nC D 8 1 S RG (typical) 0.5 ID PQFN 3.3mm x 3.3mm 40 A (@Tc(Bottom) = 25°C) Applications • Control MOSFET for Buck Converters Features and Benefits Benefits Features Low Charge (typical 7.3nC) Lower Switching Losses Low Thermal Resistance to PC
3.9. irfhm830d.pdf Size:243K _international_rectifier
PD -96327A IRFHM830DPbF HEXFET® Power MOSFET VDS 30 V RDS(on) max D 5 4 G 4.3 mΩ (@VGS = 10V) D 6 3 S Qg (typical) 13 nC D 7 2 S RG (typical) 1.1 D 8 1 S Ω ID 40 A 3.3mm x 3.3mm PQFN (@Tc(Bottom) = 25°C) Applications • Synchronous MOSFET for Buck Converters Features and Benefits Features Benefits Low RDSon (≤ 4.3mΩ) Lower Conduction Losses Schottky intrin
3.10. irfhm830pbf.pdf Size:262K _international_rectifier
IRFHM830PbF HEXFET® Power MOSFET VDS 30 V RDS(on) max 3.8 mΩ (@VGS = 10V) Qg (typical) 15 nC RG (typical) 2.5 Ω 3.3mm x 3.3mm PQFN ID 40 A (@Tc(Bottom) = 25°C) Applications • Battery Operated DC Motor Inverter MOSFET Features and Benefits Features Benefits Low RDSon (<3.8mΩ) Lower Conduction Losses Low Thermal Resistance to PCB (<3.4°C/W) Enable better thermal di
3.11. irfhm831pbf.pdf Size:261K _international_rectifier
IRFHM831PbF HEXFET® Power MOSFET VDS 30 V RDS(on) max 7.8 m (@VGS = 10V) Qg (typical) 7.3 nC RG (typical) 0.5 ID PQFN 3.3mm x 3.3mm 40 A (@Tc(Bottom) = 25°C) Applications • Control MOSFET for Buck Converters Features and Benefits Benefits Features Low Charge (typical 7.3nC) Lower Switching Losses Low Thermal Resistance to PCB (<4.7°C/W) Enable Better Thermal Dissipation
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