IRFHM8342 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRFHM8342

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.6 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 10 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 30 nS

Cossⓘ - Capacitancia de salida: 102 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.016 Ohm

Encapsulados: PQFN3.3X3.3

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IRFHM8342 datasheet

 ..1. Size:629K  international rectifier
irfhm8342.pdf pdf_icon

IRFHM8342

IRFHM8342TRPbF HEXFET Power MOSFET VDSS 30 V RDS(on) max 16 (@ VGS = 10V) m (@ VGS = 4.5V) 25 Qg (typical) 5.0 nC ID 20 A (@TC (Bottom) = 25 C) PQFN 3.3 x 3.3 mm Applications Control MOSFET for synchronous buck converter Load Switch Features Benefits Low Charge (typical 5.2 nC) Low Switching Losses Low Thermal Resistance to PCB (

 7.1. Size:593K  1
irfhm8329trpbf.pdf pdf_icon

IRFHM8342

IRFHM8329PbF HEXFET Power MOSFET VDSS 30 V VGS max 20 V RDS(on) max 6.1 G (@ VGS = 10V) m S S S (@ VGS = 4.5V) 8.8 D Qg (typical) 13 nC D D D ID D 24 A (@TC (Bottom) = 25 C) PQFN 3.3X3.3 mm Applications Charge and Discharge Switch for Notebook PC Battery Application System/Load Switch Synchronous MOSFET for

 7.2. Size:532K  1
irfhm830trpbf.pdf pdf_icon

IRFHM8342

IRFHM830PbF HEXFET Power MOSFET VDSS 30 V RDS(on) max 3.8 m (@ VGS = 10V) Qg (typical) 15 nC Rg (typical) 2.5 ID 40 A (@TC (Bottom) = 25 C) PQFN 3.3 x 3.3 mm Applications Battery Operated DC Motor Inverter MOSFET Features Benefits Low RDSon (

 7.3. Size:243K  international rectifier
irfhm830d.pdf pdf_icon

IRFHM8342

PD -96327A IRFHM830DPbF HEXFET Power MOSFET VDS 30 V RDS(on) max D 5 4 G 4.3 m (@VGS = 10V) D 6 3 S Qg (typical) 13 nC D 7 2 S RG (typical) 1.1 D 8 1 S ID 40 A 3.3mm x 3.3mm PQFN (@Tc(Bottom) = 25 C) Applications Synchronous MOSFET for Buck Converters Features and Benefits Features Benefits Low RDSon ( 4.3m ) Lower Conduction Losses Schottky intrin

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