IRFHM9331PBF Todos los transistores

 

IRFHM9331PBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRFHM9331PBF

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 2.8 W

Tensión drenaje-fuente (Vds): 30 V

Tensión compuerta-fuente (Vgs): 25 V

Corriente continua de drenaje (Id): 11 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 2.4 V

Carga de compuerta (Qg): 32 nC

Tiempo de elevación (tr): 27 nS

Conductancia de drenaje-sustrato (Cd): 310 pF

Resistencia drenaje-fuente RDS(on): 0.01 Ohm

Empaquetado / Estuche: PQFN3.3X3.3

Búsqueda de reemplazo de MOSFET IRFHM9331PBF

 

IRFHM9331PBF Datasheet (PDF)

1.1. irfhm9331pbf.pdf Size:322K _upd-mosfet

IRFHM9331PBF
IRFHM9331PBF

PD - 96313 IRFHM9331PbF HEXFET® Power MOSFET VDS -30 V S S 5 D G RDS(on) max 4 D S 14.6 mΩ D (@VGS = -10V) 6 D S 3 G D 7 D S 2 Qg (typical) 32 nC D 1 8 D S ID -11 A 3mm x 3mm PQFN (@TA = 25°C) Applications l System/load switch Features and Benefits Features Benefits Low Thermal Resistance to PCB (<6.0°C/W) Enable better thermal dissipation Compatible with Exis

3.1. irfhm9391.pdf Size:558K _upd-mosfet

IRFHM9331PBF
IRFHM9331PBF

IRFHM9391TRPbF HEXFET® Power MOSFET VDSS -30 V D 5 4 G RDS(on) max 14.6 (@ VGS = -10V) D 6 3 S m (@ VGS = -4.5V) 22.5 D 7 2 S Qg (typical) 32 nC D 8 1 S ID PQFN 3.3 x 3.3 mm -11 A (@TA = 25°C) Applications System/load switch, Charge or discharge switch for battery protection Features Benefits Low Thermal Resistance to PCB (<3.8°C/W)

 5.1. irfhm830pbf.pdf Size:229K _upd-mosfet

IRFHM9331PBF
IRFHM9331PBF

PD - 97547A IRFHM830PbF HEXFET® Power MOSFET VDS 30 V RDS(on) max 3.8 mΩ D 5 4 G (@VGS = 10V) D 6 3 S Qg (typical) 15 nC D 7 2 S RG (typical) 2.5 Ω D 8 1 S 3.3mm x 3.3mm PQFN ID 40 A (@Tc(Bottom) = 25°C) Applications • Battery Operated DC Motor Inverter MOSFET Features and Benefits Features Benefits Low RDSon (<3.8mΩ) Lower Conduction Losses Low Thermal Resi

5.2. irfhm831pbf.pdf Size:256K _upd-mosfet

IRFHM9331PBF
IRFHM9331PBF

PD -97539A IRFHM831PbF HEXFET® Power MOSFET VDS 30 V D 5 4 G RDS(on) max 7.8 m (@VGS = 10V) D 6 3 S D 7 2 S Qg (typical) 7.3 nC D 8 1 S RG (typical) 0.5 ID PQFN 3.3mm x 3.3mm 40 A (@Tc(Bottom) = 25°C) Applications • Control MOSFET for Buck Converters Features and Benefits Benefits Features Low Charge (typical 7.3nC) Lower Switching Losses Low Thermal Resistance to PC

 5.3. irfhm4226.pdf Size:562K _upd-mosfet

IRFHM9331PBF
IRFHM9331PBF

FastIRFET™ IRFHM4226TRPbF HEXFET® Power MOSFET VDSS 25 V RDS(on) max 2.4 (@ VGS = 10V) m (@ VGS = 4.5V) 3.3 Qg (typical) 16 nC ID 60 A (@TC (Bottom) = 25°C) PQFN 3.3 x 3.3 mm Applications Control or Synchronous MOSFET for high frequency buck converters Features Benefits Low RDSon (<2.4m) Lower Conduction Losses Low Charge (typical 16

5.4. irfhm8330.pdf Size:669K _upd-mosfet

IRFHM9331PBF
IRFHM9331PBF

IRFHM8330PbF HEXFET® Power MOSFET VDSS 30 V VGS max ±20 V RDS(on) max 6.6 G (@ VGS = 10V) m S S S (@ VGS = 4.5V) 9.9 D Qg (typical) 9.3 nC D D D ID D 25 A (@TC (Bottom) = 25°C) PQFN 3.3X3.3 mm Applications Charge and Discharge Switch for Notebook PC Battery Application System/Load Switch Control MOSFET for sy

 5.5. irfhm8235.pdf Size:747K _upd-mosfet

IRFHM9331PBF
IRFHM9331PBF

IRFHM8235PbF HEXFET® Power MOSFET VDSS 25 V VGS max ±20 V RDS(on) max 7.7 G (@ VGS = 10V) m S S S (@ VGS = 4.5V) 13.4 D Qg (typical) 7.7 nC D D D ID D 25 A (@TC (Bottom) = 25°C) PQFN 3.3X3.3 mm Applications Control MOSFET for synchronous buck converter Features Benefits Low Thermal Resistance to PCB (<4.1°C/W) Enable be

5.6. irfhm8342.pdf Size:629K _upd-mosfet

IRFHM9331PBF
IRFHM9331PBF

IRFHM8342TRPbF HEXFET® Power MOSFET VDSS 30 V RDS(on) max 16 (@ VGS = 10V) m (@ VGS = 4.5V) 25 Qg (typical) 5.0 nC ID 20 A (@TC (Bottom) = 25°C) PQFN 3.3 x 3.3 mm Applications Control MOSFET for synchronous buck converter Load Switch Features Benefits Low Charge (typical 5.2 nC) Low Switching Losses Low Thermal Resistance to PCB (<6.

5.7. irfhm8228.pdf Size:666K _upd-mosfet

IRFHM9331PBF
IRFHM9331PBF

IRFHM8228PbF HEXFET® Power MOSFET VDSS 25 V VGS max ±20 V RDS(on) max 5.2 G (@ VGS = 10V) m S S S (@ VGS = 4.5V) 8.7 D Qg (typical) 9.0 nC D D D ID A D 25 (@TC (Bottom) = 25°C) PQFN 3.3X3.3 mm Applications Control or synchronous MOSFET for synchronous buck converter Features Benefits Low Thermal Resistance to PCB (<3.7

5.8. irfhm8326.pdf Size:655K _upd-mosfet

IRFHM9331PBF
IRFHM9331PBF

IRFHM8326PbF HEXFET® Power MOSFET VDSS 30 V VGS max ±20 V RDS(on) max 4.7 G (@ VGS = 10V) m S S S (@ VGS = 4.5V) 6.7 D Qg (typical) 20 nC D D D ID D 70 A (@TC (Bottom) = 25°C) PQFN 3.3X3.3 mm Applications Charge and Discharge Switch for Notebook PC Battery Application System/Load Switch Synchronous MOSFET for

5.9. irfhm4234.pdf Size:581K _upd-mosfet

IRFHM9331PBF
IRFHM9331PBF

FastIRFET™ IRFHM4234TRPbF HEXFET® Power MOSFET Top View VDSS 25 V RDS(on) max 4.4 D 5 4 G (@ VGS = 10V) m D 6 3 S (@ VGS = 4.5V) 7.1 D 7 2 S Qg (typical) 8.2 nC D 8 1 S ID 60 A (@TC (Bottom) = 25°C) PQFN 3.3 x 3.3 mm Applications Control MOSFET for synchronous buck converter Features Benefits Low Charge (typical 8.2 nC) Low Switching

5.10. irfhm7194.pdf Size:571K _upd-mosfet

IRFHM9331PBF
IRFHM9331PBF

FastIRFET™ IRFHM7194TRPbF HEXFET® Power MOSFET VDSS 100 V RDS(on) max 16.4 m (@ VGS = 10V) Qg (typical) 13 nC Rg (typical) 2.0  ID 34 A (@TC (Bottom) = 25°C) PQFN 3.3 x 3.3 mm Applications  Primary Switch for High Frequency 48V/60V Telecom DC-DC Power Supplies  Secondary Side Synchronous Rectifier Features Benefits Low RDSon (<16.4m

5.11. irfhm3911.pdf Size:625K _upd-mosfet

IRFHM9331PBF
IRFHM9331PBF

IRFHM3911TRPbF HEXFET® Power MOSFET VDSS 100 V RDS(on) max G 115 m S S (@VGS = 10V) S Qg (typical) 17 nC D D D D ID D 11 A PQFN 3.3X3.3 mm (@TC (Bottom) = 25°C) Applications POE+ Power Sourcing Equipment Switch Features Benefits Large Safe Operating Area (SOA) Increased Ruggedness Low Thermal Resistance to PCB Enable better the

5.12. irfhm8363pbf.pdf Size:298K _upd-mosfet

IRFHM9331PBF
IRFHM9331PBF

IRFHM8363PbF HEXFET® Power MOSFET VDS 30 V Vgs max V ± 20 RDS(on) max G 14.9 S G (@VGS = 10V) mΩ S D D (@VGS = 4.5V) 20.4 D D D D Qg typ 6.7 nC PQFN Dual 3.3X3.3 mm ID 10 A (@Tc(Bottom) = 25°C) Applications • Power Stage for high frequency buck converters • Battery Protection charge and discharge switches Features and Benefits Features Benefits Low

5.13. irfhm4231.pdf Size:574K _upd-mosfet

IRFHM9331PBF
IRFHM9331PBF

FastIRFET™ IRFHM4231TRPbF HEXFET® Power MOSFET VDSS 25 V RDS(on) max 3.4 (@ VGS = 10V) m (@ VGS = 4.5V) 4.6 Qg (typical) 9.7 nC ID 40 A (@TC (Bottom) = 25°C) PQFN 3.3 x 3.3 mm Applications Control MOSFET for synchronous buck converter Features Benefits Low Charge (typical 9.7nC) Low Switching Losses Low RDSon (<3.4m) Lower Conduction

5.14. irfhm8337.pdf Size:651K _upd-mosfet

IRFHM9331PBF
IRFHM9331PBF

IRFHM8337TRPbF HEXFET® Power MOSFET VDSS 30 V RDS(on) max 12.4 (@ VGS = 10V) m (@ VGS = 4.5V) 17.9 Qg (typical) 5.4 nC ID PQFN 3.3 x 3.3 mm 18 A (@TC = 25°C) Applications System/load switch, Charge or discharge switch for battery protection Features Benefits Low Thermal Resistance to PCB (< 5.0°C/W) Enable better Thermal Dissipation

5.15. irfhm8334.pdf Size:246K _upd-mosfet

IRFHM9331PBF
IRFHM9331PBF

IRFHM8334TRPbF VDS 30 V HEXFET® Power MOSFET VGS max V ± 20 RDS(on) max 9.0 (@VGS = 10V) m (@VGS = 4.5V) 13.5 Qg typ. 7.1 nC ID PQFN 3.3 X 3.3 mm 25 A (@Tc(Bottom) = 25°C) Applications • Control MOSFET for high frequency buck converters Features Benefits Low Thermal Resistance to PCB (< 4.5°C/W) Enable better thermal dissipation Low Profile (<1.2mm) Increased Power Densi

5.16. irfhm8329.pdf Size:639K _upd-mosfet

IRFHM9331PBF
IRFHM9331PBF

IRFHM8329PbF HEXFET® Power MOSFET VDSS 30 V VGS max ±20 V RDS(on) max 6.1 G (@ VGS = 10V) m S S S (@ VGS = 4.5V) 8.8 D Qg (typical) 13 nC D D D ID D 24 A (@TC (Bottom) = 25°C) PQFN 3.3X3.3 mm Applications Charge and Discharge Switch for Notebook PC Battery Application System/Load Switch Synchronous MOSFET for

5.17. irfhm830dpbf.pdf Size:243K _upd-mosfet

IRFHM9331PBF
IRFHM9331PBF

PD -96327A IRFHM830DPbF HEXFET® Power MOSFET VDS 30 V RDS(on) max D 5 4 G 4.3 mΩ (@VGS = 10V) D 6 3 S Qg (typical) 13 nC D 7 2 S RG (typical) 1.1 D 8 1 S Ω ID 40 A 3.3mm x 3.3mm PQFN (@Tc(Bottom) = 25°C) Applications • Synchronous MOSFET for Buck Converters Features and Benefits Features Benefits Low RDSon (≤ 4.3mΩ) Lower Conduction Losses Schottky intrin

5.18. irfhm830pbf.pdf Size:262K _international_rectifier

IRFHM9331PBF
IRFHM9331PBF

IRFHM830PbF HEXFET® Power MOSFET VDS 30 V RDS(on) max 3.8 mΩ (@VGS = 10V) Qg (typical) 15 nC RG (typical) 2.5 Ω 3.3mm x 3.3mm PQFN ID 40 A (@Tc(Bottom) = 25°C) Applications • Battery Operated DC Motor Inverter MOSFET Features and Benefits Features Benefits Low RDSon (<3.8mΩ) Lower Conduction Losses Low Thermal Resistance to PCB (<3.4°C/W) Enable better thermal di

5.19. irfhm831pbf.pdf Size:261K _international_rectifier

IRFHM9331PBF
IRFHM9331PBF

IRFHM831PbF HEXFET® Power MOSFET VDS 30 V RDS(on) max 7.8 m (@VGS = 10V) Qg (typical) 7.3 nC RG (typical) 0.5 ID PQFN 3.3mm x 3.3mm 40 A (@Tc(Bottom) = 25°C) Applications • Control MOSFET for Buck Converters Features and Benefits Benefits Features Low Charge (typical 7.3nC) Lower Switching Losses Low Thermal Resistance to PCB (<4.7°C/W) Enable Better Thermal Dissipation

5.20. irfhm830d.pdf Size:243K _international_rectifier

IRFHM9331PBF
IRFHM9331PBF

PD -96327A IRFHM830DPbF HEXFET® Power MOSFET VDS 30 V RDS(on) max D 5 4 G 4.3 mΩ (@VGS = 10V) D 6 3 S Qg (typical) 13 nC D 7 2 S RG (typical) 1.1 D 8 1 S Ω ID 40 A 3.3mm x 3.3mm PQFN (@Tc(Bottom) = 25°C) Applications • Synchronous MOSFET for Buck Converters Features and Benefits Features Benefits Low RDSon (≤ 4.3mΩ) Lower Conduction Losses Schottky intrin

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