IRFHS9301PBF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRFHS9301PBF

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.1 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 6 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 80 nS

Cossⓘ - Capacitancia de salida: 125 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.037 Ohm

Encapsulados: PQFN2X2

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IRFHS9301PBF datasheet

 ..1. Size:323K  international rectifier
 irfhs9301pbf.pdf pdf_icon

IRFHS9301PBF

PD - 97581A IRFHS9301PbF HEXFET Power MOSFET VDS TOP VIEW -30 V VGS max 20 V D RDS(on) max D 1 6 D D 37 m G D (@VGS = -10V) D 2 D 5 D Qg (typical) 13 nC D D S S ID S G 3 4 S -8.5 A 2mm x 2mm PQFN (@TC = 25 C) Applications l Charge and Discharge Switch for Battery Application l System/load switch Features and Benefits Features Benefits Low RDSon ( 37m

 7.1. Size:276K  international rectifier
 irfhs9351pbf.pdf pdf_icon

IRFHS9301PBF

IRFHS9351PbF HEXFET Power MOSFET VDS -30 V TOP VIEW VGS max 20 V D1 RDS(on) max S1 1 6 D1 G2 170 m (@VGS = -10V) S2 D1 D1 D2 FET1 G1 2 5 G2 ID -3.4 A S1 (@TC = 25 C) G1 D2 D2 3 4 S2 D2 FET2 2mm x 2mm Dual PQFN Applications l Charge and Discharge Switch for Battery Application l System/load switch Features and Benefits Features Benefits Low RDSon ( 17

 9.1. Size:213K  international rectifier
 irfhs8342pbf.pdf pdf_icon

IRFHS9301PBF

PD - 97596B IRFHS8342PbF HEXFET Power MOSFET VDS 30 V TOP VIEW VGS max 20 V D D 1 6 D RDS(on) max D 16.0 m G D (@VGS = 10V) D 2 D 5 D Qg(typical) D 4.2 nC D (@VGS = 4.5V) S S G 3 4 S S ID 2mm x 2mm PQFN 8.5 A (@Tc(Bottom) = 25 C) Applications Control MOSFET for Buck Converters System/Load Switch Features and Benefits Features Resulting Benefits

 9.2. Size:231K  international rectifier
 irfhs8242pbf.pdf pdf_icon

IRFHS9301PBF

IRFHS8242PbF HEXFET Power MOSFET VDS 25 V TOP VIEW VGS max 20 V D RDS(on) max D 1 6 D D 13.0 m G (@VGS = 10V) D D 2 D 5 D Qg (typical) 4.3 nC D S G 3 4 S D ( @ VGS = 4.5V) S S ID 2mm x 2mm PQFN 8.5 A (@Tc(Bottom) = 25 C) Applications System/Load Switch Features and Benefits Features Resulting Benefits Low RDSon ( 13.0m ) Lower Conduction Losses L

MOSTRAR MÁS

Otros transistores... IRFHM8334, IRFHM8337, IRFHM8342, IRFHM8363PBF, IRFHM9331PBF, IRFHM9391, IRFHS8242PBF, IRFHS8342PBF, IRFB4110, IRFHS9351PBF, IRFR310PBF, IRFR320PBF, AM7340N, AM7341P, AM7343P, AM7360N, AM7361P